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TRS20N120HB

Marking:S20N120HB;Package:TO-247;SiC Schottky Barrier Diode

Applications ?PowerFactorCorrection ?SolarInverters ?UninterruptiblePowerSupplies ?DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF(PerLeg)=1.27V(typ.) (3)Lowtotalcapacitivecharge:Qc(PerLeg)=57nC(typ.) (4)Lowreversecurre

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

20N120C

Generalpurposeinverters

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

BRG20N120D

Insulated-GateBipolarTransistorinaTO-3PPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

FGA20N120FTD

1200V,20ATrenchIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGA20N120FTDTU

1200V,20ATrenchIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G20N120

34A,1200VN-ChannelIGBT

Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari

Intersil

Intersil Corporation

G20N120

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G20N120

63A,1200V,NPTSeriesN-ChannelIGBT

63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa

Intersil

Intersil Corporation

G20N120

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos

Intersil

Intersil Corporation

G20N120

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

Intersil

Intersil Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
TOSHIBA/東芝
TO-247
22+
6000
十年配單,只做原裝
詢價
TOSHIBA/東芝
21+
TO-247
5590
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價
TOSHIBA/東芝
22+
TO-247
14100
原裝正品
詢價
TOSHIBA/東芝
2022+
TO-247
45000
我司100%原裝正品現(xiàn)貨,現(xiàn)貨眾多歡迎加微信
詢價
TOSHIBA/東芝
22+
TO-247
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價
TOSHIBA/東芝
24+
TO-247
1800
只做原裝只有原裝假一罰百可開增值稅票
詢價
TOSHIBA
1809+
TO-247
326
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價
Toshiba Semiconductor and Stor
24+
TO-247-3
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
詢價
TOSHIBA
24+
con
35960
查現(xiàn)貨到京北通宇商城
詢價
TOSHIBA
2
詢價
更多TRS20N120HB供應(yīng)商 更新時間2025-2-10 14:03:00