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MCG10P03

P-ChannelPowerMOSFET

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

RFD10P03

10A,30V,0.200W,LogicLevelP-ChannelPowerMOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD10P03L

10A,30V,0.200ohm,LogicLevelP-ChannelPowerMOSFET

Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

HARRIS

Harris Corporation

RFD10P03L

10A,30V,0.200W,LogicLevelP-ChannelPowerMOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD10P03L

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

Intersil

Intersil Corporation

RFD10P03LSM

10A,30V,0.200ohm,LogicLevelP-ChannelPowerMOSFET

Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

HARRIS

Harris Corporation

RFD10P03LSM

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

Intersil

Intersil Corporation

RFP10P03L

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

RFP10P03L

10A,30V,0.200ohm,LogicLevelP-ChannelPowerMOSFET

Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

HARRIS

Harris Corporation

RFP10P03L

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

Intersil

Intersil Corporation

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    TS10P03G

  • 制造商：

    Taiwan Semiconductor Corporation

  • 類(lèi)別：

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 橋式整流器

  • 包裝：

    卷帶（TR）

  • 二極管類(lèi)型：

    Single Phase

  • 技術(shù)：

    標(biāo)準(zhǔn)

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類(lèi)型：

    通孔

  • 封裝/外殼：

    4-SIP，TS-6P

  • 供應(yīng)商器件封裝：

    TS-6P

  • 描述：

    DIODE BRIDGE 10A 200V TS-6P

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
臺(tái)產(chǎn)
23+
扁橋
80000
主營(yíng)橋堆系列,真實(shí)庫(kù)存
 詢(xún)價(jià)
Taiwan Semiconductor Corporati
24+
4-SIP TS-6P
9350
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢(xún)價(jià)
TAIWAN
1809+
TS-6P
3675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢(xún)價(jià)
TSC America Inc.
22+
9000
原廠渠道,現(xiàn)貨配單
 詢(xún)價(jià)
TSC/臺(tái)灣半導(dǎo)體
2048+
DIP-4
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢(xún)價(jià)
更多TS10P03G供應(yīng)商 更新時(shí)間2025-3-12 10:20:00

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