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V30100C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30100C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30100C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.455VatIF=5A

UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30100CI

DualHighVoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICA

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30100CI

DualHighVoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30100P

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

UltraLowVF=0.57VatIF=8A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip260°C,40s ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC TYPIC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30100PW

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30100PW

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

UltraLowVF=0.58VatIF=8A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30100S

High-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30100S

High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.39VatIF=5A

UltraLowVF=0.39VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathte

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30100S

High-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30100S

High-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30100SG

High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.437VatIF=5A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30100SG

High-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V30100SG

High-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICAL

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB30100C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB30100C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.455VatIF=5A

UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB30100C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB30100S

High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.39VatIF=5A

UltraLowVF=0.39VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathte

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB30100S

High-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

晶體管資料

  • 型號(hào):

    TSD30100(DV)

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl

  • 性質(zhì):

    開(kāi)關(guān)管 (S)_功率放大 (L)

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    1.2KV

  • 最大電流允許值:

    30A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    4

  • 可代換的型號(hào):

  • 最大耗散功率:

    310W

  • 放大倍數(shù):

  • 圖片代號(hào):

    G-280

  • vtest:

    1200

  • htest:

    999900

  • atest:

    30

  • wtest:

    310

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
專(zhuān)業(yè)模塊
MODULE
8513
模塊原裝主營(yíng)-可開(kāi)原型號(hào)增稅票
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ST
2023+
MODULE
80000
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
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ST
24+
SOT227
2050
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨
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ST
SOT227
93480
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
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TASUND/泰盛達(dá)
23+
SOP-8
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
詢價(jià)
泰科/精量電子
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂
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Measurement
22+
TO5
6000
只做原裝,假一發(fā)十,價(jià)格低。
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TE
24+
con
349899
優(yōu)勢(shì)庫(kù)存,原裝正品
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Measurement Specialties
22+
Na
1208
航宇科工半導(dǎo)體-中國(guó)航天科工集團(tuán)戰(zhàn)略合作伙伴!
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ST
23+
模塊
595
全新原裝正品,量大可訂貨!可開(kāi)17%增值票!價(jià)格優(yōu)勢(shì)!
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更多TSD30100(DV)供應(yīng)商 更新時(shí)間2025-1-12 10:12:00