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TSD835

ASYMMETRICAL THYRISTOR THYRISTOR ASYMETRIQUE

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

TSR835

8ASchottkyRectifier

TAITRON

TAITRON Components Incorporated

UPA835

NPNSILICONEPITAXIALTRANSISTORWITH2DIFFERENTELEMENTSINAFLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLDPACKAGE

DESCRIPTION TheμPA835TChasbuilt-intwodifferenttransistors(Q1andQ2)forlownoiseamplificationintheVHFbandtoUHFband. FEATURES ?Lownoise Q1:NF=1.5dBTYP.@f=2GHz,VCE=3V,IC=3mA Q2:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain Q

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA835TC

NPNSILICONEPITAXIALTRANSISTORWITH2DIFFERENTELEMENTSINAFLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLDPACKAGE

DESCRIPTION TheμPA835TChasbuilt-intwodifferenttransistors(Q1andQ2)forlownoiseamplificationintheVHFbandtoUHFband. FEATURES ?Lownoise Q1:NF=1.5dBTYP.@f=2GHz,VCE=3V,IC=3mA Q2:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain Q

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA835TF

SiliconTransistor

NPNSILICONEPITAXIALTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINTHIN-TYPESMALLMINIMOLDPACKAGE

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA835TF

NPNSILICONEPITAXIALTWINTRANSISTOR

DESCRIPTION TheUPA835TFhastwodifferentbuilt-intransistorsforlowcostamplifierandoscillatorapplicationsintheVHF/UHFband.Lownoisefigures,highgain,highcurrentcapability,andmediumoutputgivethisdevicehighdynamicrangeandexcellentlinearityfortwo-stageamplifiers.Th

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC835

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Inputoffsetvoltage±3mVMAX. ?Slewrate5.5V/μsTYP. ?Unitygainfrequency2.8MHzTYP. ?LowpowerICC≤2.2mAMAX. (Reducescircuitcurrentswhilemaintainingrelativelyhighslewrateandbandwidth) ?Highstabilityissecuredtocapacitiveloads (4000pF,AV=+1) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPS835L

SCHOTTKYBARRIERRECTIFIER8AMP35VOLT

SURFACEMOUNT POWERMITE?3SurfaceMountPowerPackage Features ?LowProfile–Maximumheightof1.1mm ?FootprintAreaof16.51mm ?LowVFProvidesHigherEfficiency ?Suppliedin16mmTapeandReel–6000units/reel ?LowThermalResistancewithDirectThermalPathofDieonExposedCa

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UPS835L

SCHOTTKYBARRIERRECTIFIER8AMP35VOLT

MicrosemiMicrosemi Corporation

美高森美美高森美公司

USD835

POWERSCHOTTKYRECTIFIERS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    TSD835

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    ASYMMETRICAL THYRISTOR THYRISTOR ASYMETRIQUE

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ST
專業(yè)模塊
MODULE
8513
模塊原裝主營-可開原型號(hào)增稅票
詢價(jià)
ST
24+
MODULE
2100
公司大量全新現(xiàn)貨 隨時(shí)可以發(fā)貨
詢價(jià)
ST
原廠原封
36900
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價(jià)
ST
22+
原廠原封
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
詢價(jià)
TRUESEMI
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
TRUESEMI
22+
TO-252
50000
原裝正品.假一罰十
詢價(jià)
TRUESEMI
23+
NA/
25750
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
詢價(jià)
24+
N/A
60000
一級(jí)代理-主營優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
PMI
24+
原廠封裝
8000
原裝現(xiàn)貨假一罰十
詢價(jià)
PREMIERMAG
2021+
DIP/SOP
16500
十年專營原裝現(xiàn)貨,假一賠十
詢價(jià)
更多TSD835供應(yīng)商 更新時(shí)間2025-1-22 16:26:00