首頁 >UPA835>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

UPA835

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION TheμPA835TChasbuilt-intwodifferenttransistors(Q1andQ2)forlownoiseamplificationintheVHFbandtoUHFband. FEATURES ?Lownoise Q1:NF=1.5dBTYP.@f=2GHz,VCE=3V,IC=3mA Q2:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain Q

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA835TC

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION TheμPA835TChasbuilt-intwodifferenttransistors(Q1andQ2)forlownoiseamplificationintheVHFbandtoUHFband. FEATURES ?Lownoise Q1:NF=1.5dBTYP.@f=2GHz,VCE=3V,IC=3mA Q2:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain Q

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA835TC-T1

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION TheμPA835TChasbuilt-intwodifferenttransistors(Q1andQ2)forlownoiseamplificationintheVHFbandtoUHFband. FEATURES ?Lownoise Q1:NF=1.5dBTYP.@f=2GHz,VCE=3V,IC=3mA Q2:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain Q

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA835TF

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION TheUPA835TFhastwodifferentbuilt-intransistorsforlowcostamplifierandoscillatorapplicationsintheVHF/UHFband.Lownoisefigures,highgain,highcurrentcapability,andmediumoutputgivethisdevicehighdynamicrangeandexcellentlinearityfortwo-stageamplifiers.Th

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA835TF

Silicon Transistor

NPNSILICONEPITAXIALTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINTHIN-TYPESMALLMINIMOLDPACKAGE

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA835TF-T1

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION TheUPA835TFhastwodifferentbuilt-intransistorsforlowcostamplifierandoscillatorapplicationsintheVHF/UHFband.Lownoisefigures,highgain,highcurrentcapability,andmediumoutputgivethisdevicehighdynamicrangeandexcellentlinearityfortwo-stageamplifiers.Th

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC835

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Inputoffsetvoltage±3mVMAX. ?Slewrate5.5V/μsTYP. ?Unitygainfrequency2.8MHzTYP. ?LowpowerICC≤2.2mAMAX. (Reducescircuitcurrentswhilemaintainingrelativelyhighslewrateandbandwidth) ?Highstabilityissecuredtocapacitiveloads (4000pF,AV=+1) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPS835L

SCHOTTKYBARRIERRECTIFIER8AMP35VOLT

SURFACEMOUNT POWERMITE?3SurfaceMountPowerPackage Features ?LowProfile–Maximumheightof1.1mm ?FootprintAreaof16.51mm ?LowVFProvidesHigherEfficiency ?Suppliedin16mmTapeandReel–6000units/reel ?LowThermalResistancewithDirectThermalPathofDieonExposedCa

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UPS835L

SCHOTTKYBARRIERRECTIFIER8AMP35VOLT

MicrosemiMicrosemi Corporation

美高森美美高森美公司

USD835

POWERSCHOTTKYRECTIFIERS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

USD835

POWERSCHOTTKYRECTIFIERS

MicrosemiMicrosemi Corporation

美高森美美高森美公司

VSC835

34x34CrosspointSwitchwithSignalDetection

GeneralDescription TheVSC835isamonolithic34x34asynchronouscrosspointswitch,designedtocarrybroadbanddatastreamsatupto2.5Gbit/s.Thenon-blockingswitchcoreisprogrammedthroughaparallelportinterfacethatallowsrandomaccessprogrammingofeachoutputport.Ahighdegree

VITESSE

Vitesse Semiconductor Corporation

WA835

GeneralPurposeCementCoatedWirewoundResistors

WELWYN

Welwyn Components Limited

WP835

5mmx10mmLIGHTBAR

Kingbright

Kingbright Company LLC

XC835

8-BitSingle-ChipMicrocontroller

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

XC835

8-BitSingle-ChipMicrocontroller

TheXC835/836hasthefollowingfeatures: ?High-performanceXC800Core –compatiblewithstandard8051processor –twoclockspermachinecyclearchitecture(formemoryaccesswithoutwaitstate) –twodatapointers ?On-chipmemory –8KbytesofBootROM,LibraryROMandUserr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

XC835M

8-BitSingle-ChipMicrocontroller

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

XC835MT

8-BitSingle-ChipMicrocontroller

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

XC835T

8-BitSingle-ChipMicrocontroller

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ZC835

SOT23SILICONVARIABLECAPACITANCEDIODES

SOT23SILICONVARIABLECAPACITANCE FEATURES *CloseToleranceC-VCharacteristics *HighTuningRatio *LowIREnablingExcellentPhaseNoisePerformance(IRTypically

Zetex

Zetex Semiconductors

詳細(xì)參數(shù)

  • 型號：

    UPA835

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
16+
SOT-363
10000
進(jìn)口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
NEC
24+
SOT363
11181
詢價
NEC
23+
SOT-363
7750
全新原裝優(yōu)勢
 詢價
NEC
17+
SOT-363
6200
100%原裝正品現(xiàn)貨
 詢價
NEC
2020+
SOT-363
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
 詢價
NEC
1742+
SOT363
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
 詢價
NEC
23+
NA
19854
專業(yè)電子元器件供應(yīng)鏈正邁科技特價代理QQ1304306553
 詢價
NEC
22+23+
SOT363
12923
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
NEC
22+
SOT363
30352
原裝正品現(xiàn)貨
 詢價
NEC
2020+
SOT23
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
更多UPA835供應(yīng)商 更新時間2024-12-23 15:13:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多