TSHG5510_V02中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs

double hetero (DH) technology with high radiant power and

high speed, molded in a clear, untinted plastic package.

FEATURES

? Package type: leaded

? Package form: T-1?

? Dimensions (in mm): ? 5

? Leads with stand-off

? Peak wavelength: λp = 830 nm

? High reliability

? High radiant power

? High radiant intensity

? Angle of half intensity: ? = ± 38°

? Low forward voltage

? Suitable for high pulse current operation

? High modulation bandwidth: fc = 24 MHz

? Good spectral matching to Si photodetectors

? Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC