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TSHG8200_V02中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

TSHG8200_V02
廠商型號(hào)

TSHG8200_V02

功能描述

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

文件大小

112.82 Kbytes

頁(yè)面數(shù)量

5 頁(yè)

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡(jiǎn)稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-9 18:01:00

TSHG8200_V02規(guī)格書詳情

DESCRIPTION

TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs

double hetero (DH) technology with high radiant power and

high speed, molded in a clear, untinted plastic package.

FEATURES

? Package type: leaded

? Package form: T-1?

? Dimensions (in mm): ??5

? Peak wavelength: ?p = 830 nm

? High reliability

? High radiant power

? High radiant intensity

? Angle of half intensity: ? = ± 10°

? Low forward voltage

? Suitable for high pulse current operation

? High modulation bandwidth: fc = 18 MHz

? Good spectral matching with CMOS cameras

? Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Note

** Please see document “Vishay Material Category Policy”:

www.vishay.com/doc?99902

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