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TSM1N60CP中文資料臺(tái)灣半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

TSM1N60CP
廠商型號(hào)

TSM1N60CP

功能描述

N-Channel Power Enhancement Mode MOSFET

文件大小

174.02 Kbytes

頁(yè)面數(shù)量

4 頁(yè)

生產(chǎn)廠商 Taiwan Semiconductor Company, Ltd
企業(yè)簡(jiǎn)稱

TSC臺(tái)灣半導(dǎo)體

中文名稱

臺(tái)灣半導(dǎo)體股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2024-11-8 20:38:00

TSM1N60CP規(guī)格書詳情

VDS= 600V

ID= 1A

RDS (on), Vgs @ 10V, Ids @ 0.6A = 8?

General Description

The TSM1N60 is used an advanced termination scheme toprovide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.

Features

Robust high voltage termination

Avalanche energy specified

Diode is characterized for use in bridge circuits

Source to Drain diode recovery time comparable to a discrete fast recovery diode.

IDSSand VDS(on)specified at elevated temperature

產(chǎn)品屬性

  • 型號(hào):

    TSM1N60CP

  • 制造商:

    Taiwan Semiconductor

  • 功能描述:

    MOSFET N 600V D-PAK

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