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TSM2N60CP中文資料臺(tái)灣半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

TSM2N60CP
廠(chǎng)商型號(hào)

TSM2N60CP

功能描述

N CHANNEL POWER ENHANCEMENT MODE MOSFET

文件大小

211.16 Kbytes

頁(yè)面數(shù)量

3 頁(yè)

生產(chǎn)廠(chǎng)商 Taiwan Semiconductor Company, Ltd
企業(yè)簡(jiǎn)稱(chēng)

TSC臺(tái)灣半導(dǎo)體

中文名稱(chēng)

臺(tái)灣半導(dǎo)體股份有限公司官網(wǎng)

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更新時(shí)間

2025-1-12 9:00:00

TSM2N60CP規(guī)格書(shū)詳情

General Description

The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients

Features

● Robust high voltage termination

● Avalanche energy specified

● Diode is characterized for use in bridge circuits

● Source to Drain diode recovery time comparable to a discrete fast recovery diode.

產(chǎn)品屬性

  • 型號(hào):

    TSM2N60CP

  • 功能描述:

    MOSFET 600V 2Amp N channel MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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