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TSW2110EVM

包裝:盒 功能:時(shí)鐘發(fā)生器 類別:開(kāi)發(fā)板,套件,編程器 評(píng)估和演示板及套件 描述:EVAL MODULE FOR TSW2110 10MHZ

TI1Texas Instruments

德州儀器

UM2110

ATTENUATORANDPOWERPINDIODES2??30MHz

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UM2110

PINDIODE

DESCRIPTION UM2100SeriesPINdiodesaredesignedfortransmit/receiveswitchandattenuatorapplicationsinHFband(2-30MHz)andbelow.Asseriesconfiguredswitches,theselonglifetime(25μstypical)diodescancontrolupto2.5kW,CWina50ohmsystem.InHFband,insertionlossisless

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UM2110B

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UM2110C

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UN2110

SiliconPNPepitaxialplanertransistor

SiliconPNPepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Minitypepackageallowingeasyautomaticinsertionthroughtape packingandmagazinepacking

PanasonicPanasonic Semiconductor

松下松下電器

UNR2110

SiliconPNPepitaxialplanartype

SiliconPNPepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Minitypepackageallowingeasyautomaticinsertionthroughtape packingandmagazinepacking

PanasonicPanasonic Semiconductor

松下松下電器

UPG2110TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2110TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION NECsUPG2110TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES ?LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V, fRF=1850to1910MHz

CEL

California Eastern Labs

UTCM2110

LINEARINTEGRATEDCIRCUIT

UTCUnisonic Technologies

友順友順科技股份有限公司

V2110B

Finger-shapedheatsinkTO-126

ASSMANN

ASSMANN WSW COMPONENTS

VDA2110CTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDA2110NTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VN2110

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VN2110ND

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VP2110

P-ChannelEnhancement-ModeVerticalDMOSFET

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

VP2110

P-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertexVP2110isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi

SUTEX

Supertex, Inc

VP2110

P-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda

SUTEX

Supertex, Inc

VP2110ND

P-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda

SUTEX

Supertex, Inc

WEBR2110FXGS-D

WaterproofCircularConnectorsforSolderTerminationsMeetingIP67

DDK

DDK Ltd.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    TSW2110EVM

  • 制造商:

    Texas Instruments

  • 類別:

    開(kāi)發(fā)板,套件,編程器 > 評(píng)估和演示板及套件

  • 包裝:

  • 類型:

    計(jì)時(shí)

  • 功能:

    時(shí)鐘發(fā)生器

  • 使用的 IC/零件:

    ADS4249

  • 所含物品:

  • 描述:

    EVAL MODULE FOR TSW2110 10MHZ

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TI
24+
開(kāi)發(fā)板
20000
絕對(duì)原裝現(xiàn)貨
詢價(jià)
TI/德州儀器
23+
8355
只做原裝現(xiàn)貨/實(shí)單可談/支持含稅拆樣
詢價(jià)
24+
N/A
53000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
SAMTEC
24+
con
35960
查現(xiàn)貨到京北通宇商城
詢價(jià)
SAMTEC
24+
109
詢價(jià)
SAMTEC
520
全新原裝 貨期兩周
詢價(jià)
SAMTEC/申泰
23+
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
詢價(jià)
SAMTEC
2023+
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
SAC
1535+
1500
詢價(jià)
SAC
23+
1500
全新原裝,歡迎來(lái)電咨詢
詢價(jià)
更多TSW2110EVM供應(yīng)商 更新時(shí)間2025-1-11 13:20:00