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12N10

12A,100VN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

12N10

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

12N10

N-Channel100V(D-S)MOSFET

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

12N10

N-Channel100V(D-S)MOSFET

APPLICATIONS ?PrimarySideSwitch

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

12N10L

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

12N10P

12Amps,100VoltsN-CHANNELPowerMOSFET

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實業(yè)重慶平偉實業(yè)股份有限公司

A12N10P

PanelsandPanelAccessories

PENTAIRPentair plc. All rights reserved.

濱特爾濱特爾集團

A12N10PP

PERFORATEDPANELS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

A12N10PP

PanelsandPanelAccessories

PENTAIRPentair plc. All rights reserved.

濱特爾濱特爾集團

ADM12N10E

N-ChannelEnhancementModeFieldEffectTransistor

ADVAdvanced (Shenzhen) Electronics Co.,Ltd

愛德微愛德微(深圳)電子有限公司

BRF12N10

N-CHANNELMOSFETinaTO-220FPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

CED12N10

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導體有限公司

CED12N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,11A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED12N10

N-Channel100V(D-S)MOSFET

FEATURES ?DT-TrenchPowerMOSFET ?175°CJunctionTemperature ?100RgTested APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

CED12N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,11A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED12N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,11A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED12N10L

N-Channel100V(D-S)MOSFET

FEATURES ?DT-TrenchPowerMOSFET ?175°CJunctionTemperature ?100RgTested APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

CED12N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,11A,RDS(ON)=175mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=185mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU12N10

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU12N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,11A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細參數(shù)

  • 型號:

    TW12N10CX

  • 功能描述:

    TRIAC|1KV V(DRM)|12A I(T)RMS|TO-103VARM6

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AEG
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TP
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更多TW12N10CX供應商 更新時間2024-12-26 18:53:00