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APM2321

P-ChannelEnhancementModeMOSFET

Features ?-20V/-0.9A,RDS(ON)=370m?(typ.)@VGS=-4.5VRDS(ON)=560m?(typ.)@VGS=-2.5V ?SuperHighDenseCellDesignforExtremelyLowRDS(ON) ?ReliableandRugged ?SOT-23Package Applications ?PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems.

ANPECAnpec Electronics Coropration

茂達電子茂達電子股份有限公司

APM2321A

P-ChannelEnhancementModeMOSFET

Features ?-20V/-0.9A,RDS(ON)=370m?(typ.)@VGS=-4.5VRDS(ON)=560m?(typ.)@VGS=-2.5V ?SuperHighDenseCellDesignforExtremelyLowRDS(ON) ?ReliableandRugged ?SOT-23Package Applications ?PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems.

ANPECAnpec Electronics Coropration

茂達電子茂達電子股份有限公司

APM2321AAC-TRL

P-Channel20-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

APM2321AC

P-Channel20-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

APM2321AC-TR

P-ChannelEnhancementModeMOSFET

Features ?-20V/-0.9A,RDS(ON)=370m?(typ.)@VGS=-4.5VRDS(ON)=560m?(typ.)@VGS=-2.5V ?SuperHighDenseCellDesignforExtremelyLowRDS(ON) ?ReliableandRugged ?SOT-23Package Applications ?PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems.

ANPECAnpec Electronics Coropration

茂達電子茂達電子股份有限公司

B2321

DesolderingTool

InstructionManual ? ThankyouforpurchasingtheHAKKO475desolderingtool.PleasereadthismanualbeforeoperatingtheHAKKO475.Keepthismanualreadilyaccessibleforreference.

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

BC2321

Plastic-EncapsulateMOSFETS

APPLICATION PASwitch LoadSwitch FEATURE TrenchFETPowerMOSFET

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BR2321W

P-ChannelMOSFETinaSOT-323PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

CEH2321

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-4.8A,RDS(ON)=55mΩ@VGS=-4.5V. RDS(ON)=62mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■TSOP-6package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEH2321

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-4.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=62mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

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