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UM2106

ATTENUATORANDPOWERPINDIODES2??30MHz

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UM2106

PINDIODE

DESCRIPTION UM2100SeriesPINdiodesaredesignedfortransmit/receiveswitchandattenuatorapplicationsinHFband(2-30MHz)andbelow.Asseriesconfiguredswitches,theselonglifetime(25μstypical)diodescancontrolupto2.5kW,CWina50ohmsystem.InHFband,insertionlossisless

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UM2106B

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UM2106D

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UPG2106

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPG2106TB

GaAsINTEGRATEDCIRCUITS

FEATURES ?Operationfrequency:mPG2106TB:fopt=889to960MHz :mPG2110TB:fopt=1429to1453MHz ?Supplyvoltage:mPG2106TB,mPG2110TB:VDD1,2=2.7to3.3V(3.0VTYP.) ?Circuitcurrent:mPG2106TB,mPG2110TB:IDD=25mATYP.@VDD1,2=3.0V,VAGC=2.5V,Pout=+8dBm ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPG2106TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION NECsUPG2106TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES ?LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V,fRF=889to960MHz@

CEL

California Eastern Labs

UPG2106TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

VN2106

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VN2106N

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

供應(yīng)商型號品牌批號封裝庫存備注價格
UNI-SEMI宇力半導(dǎo)體
24+
SOP8
45000
宇力原廠渠道供應(yīng)
詢價
24+
N/A
51000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
UNI-SEMIC(宇力半導(dǎo)體)
23+
SOP-8
3840
10年專業(yè)做電源IC/原裝現(xiàn)貨庫存
詢價
UNI
23+
SOT-89
12500
全新原裝現(xiàn)貨熱賣,價格優(yōu)勢
詢價
TFK
23+
SOP8
5000
原裝正品,假一罰十
詢價
TFK
24+
DIP-14
24
本站現(xiàn)庫存
詢價
TFK
23+
DIP
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
TFK
2020+
DIP
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
TFK
24+
DIP14
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
詢價
TFK
23+
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
詢價
更多U2106C供應(yīng)商 更新時間2025-2-9 11:00:00