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BF904AWR

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904AWR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904R

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904R

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904R

N-channeldualgateMOS-FETs

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904R

N-channeldualgateMOS-FETs

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904WR

N-channeldual-gateMOS-FET

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES ?Speciallyde

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BGD904

CATVamplifiermodules

DESCRIPTION HybridamplifiermodulesinaSOT115Jpackageoperatingwithavoltagesupplyof24V(DC). Bothmodulesareelectricallyidenticalonlythepinningisdifferent. FEATURES ?Excellentlinearity ?Extremelylownoise ?Excellentreturnlossproperties ?Siliconnitridepassivatio

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BGD904

860MHz,20dBgainpowerdoubleramplifier

DESCRIPTION HybridamplifiermodulesinaSOT115Jpackageoperatingwithavoltagesupplyof24V(DC).Bothmodulesareelectricallyidentical,onlythepinningisdifferent. FEATURES ?Excellentlinearity ?Extremelylownoise ?Excellentreturnlossproperties ?Siliconnitridepassivatio

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BGD904L

CATVamplifiermodule

DESCRIPTION HybridamplifiermoduleinaSOT115Jpackageoperatingwithasupplyvoltageof24V. FEATURES ?Excellentlinearity ?Extremelylownoise ?Excellentreturnlossproperties ?Siliconnitridepassivation ?Ruggedconstruction ?Goldmetallizationensuresexcellentreliability

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號:

    U904

  • 制造商:

    APEM

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SOT-6
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25+
HIQUAND-64
18000
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APEM
20+
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7896
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Apem
22+
NA
186
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24+
N/A
62000
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UC
23+
SOP
1031
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Amphenol
24+
connector
14669
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