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UG1N120

1200V NPT SERIES N-CHANNEL IGBT

UTCUnisonic Technologies

友順友順科技股份有限公司

UG1N120G-TA3-T

1200V NPT SERIES N-CHANNEL IGBT

UTCUnisonic Technologies

友順友順科技股份有限公司

UG1N120L-TA3-T

1200V NPT SERIES N-CHANNEL IGBT

UTCUnisonic Technologies

友順友順科技股份有限公司

1N120

GOLDBONDEDDIODES

[VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime

ETCList of Unclassifed Manufacturers

未分類制造商

HGTD1N120BNS

TrenchField-StopTechnologyIGBT

DESCRIPTION ·Fastswitching ·LowSwitchingLosses APPLICATIONS ·ACandDCmotorcontrols ·Power ·Lighting

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

HGTD1N120BNS

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTD1N120BNS

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTD1N120BNS

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

Intersil

Intersil Corporation

HGTD1N120CNS

6.2A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state

Intersil

Intersil Corporation

HGTP1N120BN

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP1N120BN

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

Intersil

Intersil Corporation

HGTP1N120BN

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP1N120BND

5.3A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTP1N120BNDandtheHGT1S1N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state

Intersil

Intersil Corporation

HGTP1N120CN

6.2A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state

Intersil

Intersil Corporation

HGTP1N120CND

6.2A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTP1N120CNDandtheHGT1S1N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state

Intersil

Intersil Corporation

IXTA1N120P

N-ChannelEnhancementMode

Polar?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?LowQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?

IXYS

IXYS Corporation

IXTA1N120P

N-ChannelEnhancementModePowerMOSFET

IXYS

IXYS Corporation

IXTP1N120P

N-ChannelEnhancementMode

Polar?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?LowQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?

IXYS

IXYS Corporation

IXTP1N120P

N-ChannelEnhancementModePowerMOSFET

IXYS

IXYS Corporation

IXTY1N120P

N-ChannelEnhancementModePowerMOSFET

IXYS

IXYS Corporation

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NA
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更多UG1N120供應(yīng)商 更新時(shí)間2025-1-7 15:00:00