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HGTP1N120BN

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

Intersil

Intersil Corporation

HGTP1N120BN

5.3A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120BNSandHGTP1N120BNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduct

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP1N120BND

5.3A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTP1N120BNDandtheHGT1S1N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state

Intersil

Intersil Corporation

HGTP1N120CN

6.2A,1200V,NPTSeriesN-ChannelIGBT

TheHGTD1N120CNS,andtheHGTP1N120CNareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-state

Intersil

Intersil Corporation

HGTP1N120CND

6.2A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTP1N120CNDandtheHGT1S1N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-state

Intersil

Intersil Corporation

IXTA1N120P

N-ChannelEnhancementMode

Polar?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?LowQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?

IXYS

IXYS Corporation

IXTA1N120P

N-ChannelEnhancementModePowerMOSFET

IXYS

IXYS Corporation

IXTP1N120P

N-ChannelEnhancementMode

Polar?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?LowQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?

IXYS

IXYS Corporation

IXTP1N120P

N-ChannelEnhancementModePowerMOSFET

IXYS

IXYS Corporation

IXTY1N120P

N-ChannelEnhancementModePowerMOSFET

IXYS

IXYS Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
ATMEL
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
Diodes Incorporated
25+
DO-15
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
LITEON/光寶
2022+
688000
全新原裝 貨期兩周
 詢價
LITEON/光寶
24+
ROHS
990000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
ISC/固電
23+
TO-247TO-3P-3
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
TAIWAN
1809+
TO-247
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
TSC America Inc.
22+
9000
原廠渠道,現(xiàn)貨配單
 詢價
Taiwan Semiconductor
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
微芯
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
NOV
2023+
No
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
 詢價
更多UG1N120供應(yīng)商 更新時間2025-4-26 15:00:00

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