首頁(yè)>UPA2351T1P-E4-A>規(guī)格書(shū)詳情
UPA2351T1P-E4-A中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
UPA2351T1P-E4-A |
| 功能描述 | MOS FIELD EFFECT TRANSISTOR |
| 文件大小 |
400.84 Kbytes |
| 頁(yè)面數(shù)量 |
11 頁(yè) |
| 生產(chǎn)廠商 | Renesas Technology Corp |
| 企業(yè)簡(jiǎn)稱 |
RENESAS【瑞薩】 |
| 中文名稱 | 瑞薩科技有限公司官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-3-11 22:30:00 |
| 人工找貨 | UPA2351T1P-E4-A價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
UPA2351T1P-E4-A規(guī)格書(shū)詳情
DESCRIPTION
The μ PA2351T1P is a Dual N-channel MOSFET designed for
Lithium-Ion battery protection circuit.
Ecologically Flip chip MOSFET for Lithium-Ion battery Protection
(EFLIP).
FEATURES
? Monolithic Dual MOSFET
The Drain connection on circuit board is unnecessary, because
Drains of 2MOSFET are internally connected.
? 2.5 V drive available and low on-state resistance
RSS(on)1 = 40 mΩ MAX. (VGS = 4.5 V, IS = 3.0 A)
RSS(on)2 = 42 mΩ MAX. (VGS = 4.0 V, IS = 3.0 A)
RSS(on)3 = 50 mΩ MAX. (VGS = 3.1 V, IS = 3.0 A)
RSS(on)4 = 64 mΩ MAX. (VGS = 2.5 V, IS = 3.0 A)
? Built-in G-S protection diode against ESD
? Pb-free Bump
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NEC |
2020+ |
BGA |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
NEC |
22+ |
BGA |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
NEC |
23+ |
NA/ |
8250 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票 |
詢價(jià) | ||
NEC |
24+ |
BGA |
20000 |
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅??！ |
詢價(jià) | ||
RENESAS |
2018+ |
SMD |
11256 |
只做進(jìn)口原裝正品!假一賠十! |
詢價(jià) | ||
NEC |
23+ |
BGA |
999999 |
原裝正品現(xiàn)貨量大可訂貨 |
詢價(jià) | ||
NEC |
25+ |
BGA |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
RENESAS |
24+ |
BGA |
5000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價(jià) | ||
NEC |
22+23+ |
BGA |
29764 |
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
NEC |
23+ |
BGA |
30000 |
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢價(jià) |
