首頁(yè)>UPA2352T1P>規(guī)格書詳情
UPA2352T1P中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
UPA2352T1P |
| 功能描述 | MOS FIELD EFFECT TRANSISTOR |
| 文件大小 |
402.33 Kbytes |
| 頁(yè)面數(shù)量 |
11 頁(yè) |
| 生產(chǎn)廠商 | Renesas Technology Corp |
| 企業(yè)簡(jiǎn)稱 |
RENESAS【瑞薩】 |
| 中文名稱 | 瑞薩科技有限公司官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-3-30 23:00:00 |
| 人工找貨 | UPA2352T1P價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
UPA2352T1P規(guī)格書詳情
DESCRIPTION
The μ PA2352T1P is a Dual N-channel MOSFET designed for
Lithium-Ion battery protection circuit.
Ecologically Flip chip MOSFET for Lithium-Ion battery Protection
(EFLIP).
FEATURES
? Monolithic Dual MOSFET
Connecting the Drains on the circuit board is not required
because the Drains of the FET1 and the FET2 are internally
connected.
? 2.5 V drive available and low on-state resistance
RSS(on)1 = 43.0 mΩ MAX. (VGS = 4.5 V, IS = 2.0 A)
RSS(on)2 = 45.0 mΩ MAX. (VGS = 4.0 V, IS = 2.0 A)
RSS(on)3 = 55.0 mΩ MAX. (VGS = 3.1 V, IS = 2.0 A)
RSS(on)4 = 67.0 mΩ MAX. (VGS = 2.5 V, IS = 2.0 A)
? Built-in G-S protection diode against ESD
? Pb-free bump
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
RENESAS(瑞薩)/IDT |
23+ |
LGA4(1.4x1.4) |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
NEC |
23+ |
NA/ |
5482 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價(jià) | ||
RENESAS |
2016+ |
QFN |
4300 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢價(jià) | ||
RENESAS |
2020+ |
BGA |
8000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
NEC |
09+ |
BGA |
2232 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
NEC |
22+ |
BGA |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
RENESAS |
18+ |
QFN |
85600 |
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票 |
詢價(jià) | ||
NEC |
2023+ |
BGA |
8800 |
正品渠道現(xiàn)貨 終端可提供BOM表配單。 |
詢價(jià) | ||
NEC |
21+ |
BGA |
2232 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
RENESAS |
20+ |
SMD |
2020 |
進(jìn)口原裝現(xiàn)貨,假一賠十 |
詢價(jià) |
