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UPD431000A-AXX

MOS INTEGRATED CIRCUIT

Features ?131,072wordsby8bitsorganization ?Fastaccesstime:70,85,100,120,150ns(MAX.) ?Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) ?Operatingambienttemperature:TA=0to70°C ?LowVCCdataretention:2.0V(MIN.) ?OutputEnablei

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD431000A-AXXX

MOS INTEGRATED CIRCUIT

Features ?131,072wordsby8bitsorganization ?Fastaccesstime:70,85,100,120,150ns(MAX.) ?Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) ?Operatingambienttemperature:TA=–25to+85°C ?LowVCCdataretention:2.0V(MIN.) ?OutputEnabl

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UD431000A-BXXX

MOSINTEGRATEDCIRCUIT

Features ?131,072wordsby8bitsorganization ?Fastaccesstime:70,85,100,120,150ns(MAX.) ?Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) ?Operatingambienttemperature:TA=–25to+85°C ?LowVCCdataretention:2.0V(MIN.) ?OutputEnabl

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD431000A

MOSINTEGRATEDCIRCUIT

Features ?131,072wordsby8bitsorganization ?Fastaccesstime:70,85,100,120,150ns(MAX.) ?Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) ?Operatingambienttemperature:TA=0to70°C ?LowVCCdataretention:2.0V(MIN.) ?OutputEnablei

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD431000A

1M-BITCMOSSTATICRAM128K-WORDBY8-BIT

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPD431000A

1M-BITCMOSSTATICRAM128K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPD431000A-BXX

MOSINTEGRATEDCIRCUIT

Features ?131,072wordsby8bitsorganization ?Fastaccesstime:70,85,100,120,150ns(MAX.) ?Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) ?Operatingambienttemperature:TA=0to70°C ?LowVCCdataretention:2.0V(MIN.) ?OutputEnablei

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD431000A-X

1M-BITCMOSSTATICRAM128K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPD431000A-X

MOSINTEGRATEDCIRCUIT

Features ?131,072wordsby8bitsorganization ?Fastaccesstime:70,85,100,120,150ns(MAX.) ?Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) ?Operatingambienttemperature:TA=–25to+85°C ?LowVCCdataretention:2.0V(MIN.) ?OutputEnabl

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD431000A-XXL

MOSINTEGRATEDCIRCUIT

Features ?131,072wordsby8bitsorganization ?Fastaccesstime:70,85,100,120,150ns(MAX.) ?Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) ?Operatingambienttemperature:TA=0to70°C ?LowVCCdataretention:2.0V(MIN.) ?OutputEnablei

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD431000A-XXLL

MOSINTEGRATEDCIRCUIT

Features ?131,072wordsby8bitsorganization ?Fastaccesstime:70,85,100,120,150ns(MAX.) ?Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) ?Operatingambienttemperature:TA=0to70°C ?LowVCCdataretention:2.0V(MIN.) ?OutputEnablei

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD431000A-XXX

MOSINTEGRATEDCIRCUIT

Features ?131,072wordsby8bitsorganization ?Fastaccesstime:70,85,100,120,150ns(MAX.) ?Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) ?Operatingambienttemperature:TA=–25to+85°C ?LowVCCdataretention:2.0V(MIN.) ?OutputEnabl

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
21+
SOP-32
13
原裝現(xiàn)貨假一賠十
詢價(jià)
NEC
23+
SOP-32
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
RENESAS
2022+
DIP
6000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
NEC
SOP-32
396379
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價(jià)
NEC
589220
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量
詢價(jià)
NEC
2023+
SOP-32
50000
原裝現(xiàn)貨
詢價(jià)
NEC
2023+
SOP-32
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
詢價(jià)
NEC
24+
DIP-32
4650
詢價(jià)
NEC
23+
DIP-32
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
詢價(jià)
24+
DIP
38
詢價(jià)
更多UPD431000A-AXX供應(yīng)商 更新時(shí)間2025-1-13 14:00:00