首頁 >UPD45128163G5>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
UPD45128163G5 | 128M-bit Synchronous DRAM 4-bank, LVTTL | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | |
128M-bit Synchronous DRAM 4-bank, LVTTL Description TheμPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
128M-bit Synchronous DRAM 4-bank, LVTTL Description TheμPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
128M-bit Synchronous DRAM 4-bank, LVTTL Description TheμPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
128M-bit Synchronous DRAM 4-bank, LVTTL Description TheμPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description TheμPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description TheμPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description TheμPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description TheμPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
128M-bit Synchronous DRAM 4-bank, LVTTL Description TheμPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
128M-bit Synchronous DRAM 4-bank, LVTTL Description TheμPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description TheμPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description TheμPD45128163ishigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemory,organizedas2,097,152×16×4(word×bit×bank).ThesynchronousDRAMachievedhigh-speeddatatransferusingthepipelinearchitecture.Allinputsandoutputsaresynchronizedwiththepositive | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description TheμPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description TheμPD45128163ishigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemory,organizedas2,097,152×16×4(word×bit×bank).ThesynchronousDRAMachievedhigh-speeddatatransferusingthepipelinearchitecture.Allinputsandoutputsaresynchronizedwiththepositive | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description TheμPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description TheμPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
128M-bit Synchronous DRAM 4-bank, LVTTL Description TheμPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
128M-bit Synchronous DRAM 4-bank, LVTTL Description TheμPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Description TheμPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA |
詳細參數(shù)
- 型號：
UPD45128163G5
- 制造商：
Renesas Electronics Corporation
- 功能描述：
128 MBIT SDRAM
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
TSOP54 |
540 |
詢價 | |||
ELPIDA |
23+ |
NA |
39960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
ELPIDA |
24+ |
TSOP |
2568 |
原裝優(yōu)勢!絕對公司現(xiàn)貨 |
詢價 | ||
NEC |
21+ |
TSOP54 |
6000 |
絕對原裝現(xiàn)貨 |
詢價 | ||
NEC |
2000 |
26 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
NEC |
17+ |
TSOP |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
爾必達(ELPIDA) |
2013+ |
TSOP-54 |
18998 |
專業(yè)SDRAM代理銷售 |
詢價 | ||
NEC |
03+ |
SOP |
5000 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
NEC |
23+ |
TSSOP/54 |
7000 |
絕對全新原裝!100%保質(zhì)量特價!請放心訂購! |
詢價 | ||
NEC |
2016+ |
TSOP54 |
6528 |
只做進口原裝現(xiàn)貨!或訂貨,假一賠十! |
詢價 |
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