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MTM4N06L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP4N06L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PJW4N06A

60VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@3.0A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJW4N06A

60VN-ChannelEnhancementModeMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJW4N06A-AU

60VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@3A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

RFD4N06L

4A,60V,0.600Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

Intersil

Intersil Corporation

RFD4N06L

4A,60V,0.600Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD4N06LSM

4A,60V,0.600Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD4N06LSM

4A,60V,0.600Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

Intersil

Intersil Corporation

RFP4N06

4A,50Vand60V,0.800Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

Intersil

Intersil Corporation

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UTC/友順
22+
24000
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UTC
20232024
TO252
6000
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Phoenix/菲尼克斯
23/24+
3045101
10459
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Phoenix Contact
2306+
NA
6680
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Master
1931+
N/A
567
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CorDEXINSTRUMENTSINC.
新
7
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CorDEX INSTRUMENTS INC.
2022+
3
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24+
QFP
16800
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UTC
2023+
SOP-8
80000
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更多UT4N06供應(yīng)商 更新時(shí)間2025-2-3 15:03:00

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