首頁 >V20150SG-E3>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
V20150SG-E3 | High efficiency operation FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
V20150SG-E3 | High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A UltraLowVF=0.57VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECand | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
包裝:管件 封裝/外殼:TO-220-3 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述:DIODE SCHOTTKY 150V 20A TO220AB | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | ||
Highefficiencyoperation FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Highefficiencyoperation FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Highefficiencyoperation FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號:
V20150SG-E3
- 功能描述:
肖特基二極管與整流器 20 Amp 150 Volt Single TrenchMOS
- RoHS:
否
- 制造商:
Skyworks Solutions, Inc.
- 產(chǎn)品:
Schottky Diodes
- 峰值反向電壓:
2 V
- 正向連續(xù)電流:
50 mA
- 配置:
Crossover Quad
- 正向電壓下降:
370 mV
- 最大功率耗散:
75 mW
- 工作溫度范圍:
- 65 C to + 150 C
- 安裝風(fēng)格:
SMD/SMT
- 封裝/箱體:
SOT-143
- 封裝:
Reel
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
VIS |
23+ |
TO-220AB |
10000 |
公司只做原裝正品 |
詢價 | ||
VIS |
22+ |
TO-220AB |
6000 |
十年配單,只做原裝 |
詢價 | ||
VIS |
23+ |
TO-220AB |
6000 |
原裝正品,支持實(shí)單 |
詢價 | ||
VIS |
22+ |
TO-220AB |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價 | ||
VIS |
24+ |
TO-TO-220AB |
12300 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價 | ||
VISHAY |
1809+ |
TO-220 |
3675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
24+ |
N/A |
62000 |
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇 |
詢價 | |||
FERRAZ/羅蘭熔斷器 |
23+ |
標(biāo)準(zhǔn)封裝 |
5000 |
原廠授權(quán)一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質(zhì)保 |
詢價 | ||
Assmann |
22+ |
NA |
15374 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
PHILIPS/飛利浦 |
23+ |
DIP |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 |
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