| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?Lowthermalresistance ?Solderbathtemperature275°Cmaximum,10s,perJESD 22-B106 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?Lowthermalresistance ?Solderbathtemperature275°Cmaximum,10s,perJESD 22-B106 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICA | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICA | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Powerpack MOS Schottky Barrier Rectifier Features ·TrenchMosSchottkyBarrier ·GuardringforovervoltageProtection ·LowForwardVoltageDrop ·LowReverseLeakageCurrent ·HighSurgeCurrentCapability ·PlasticMaterialhasULFlammability Classification94V-O | DAESAN Daesan Electronics Corp. | DAESAN | ||
Schottky Barrier Rectifier FEATURES ·Guard-RingforStressProtection ·LowForwardVoltage ·HighOperatingJunctionTemperature ·LowPowerLoss/HighEfficiency ·Highsurgecapability ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICA | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICA | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號：
V401
- 功能描述：
DIODE 40A 100V SCHOTTKY TO220-3
- RoHS：
是
- 類別：
分離式半導(dǎo)體產(chǎn)品 >> 二極管，整流器 - 陣列
- 系列：
-
- 其它有關(guān)文件：
STTH10LCD06C View All Specifications
- 標(biāo)準(zhǔn)包裝：
1,000
- 系列：
- 電壓 - 在 If
- 時(shí)為正向(Vf)（最大）：
2V @ 5A 電流 - 在 Vr
- 時(shí)反向漏電：
1µA @ 600V 電流 -
- 平均整流(Io)（每個(gè)二極管）：
5A 電壓
- -(Vr)（最大）：
600V
- 反向恢復(fù)時(shí)間(trr)：
50ns
- 二極管類型：
標(biāo)準(zhǔn)
- 速度：
快速恢復(fù) = 200mA（Io）
- 二極管配置：
1 對共陰極
- 安裝類型：
表面貼裝
- 封裝/外殼：
TO-263-3，D²Pak（2 引線+接片），TO-263AB
- 供應(yīng)商設(shè)備封裝：
D2PAK
- 包裝：
帶卷(TR)
- 產(chǎn)品目錄頁面：
1553(CN2011-ZH PDF)
- 其它名稱：
497-10107-2
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Vishay(威世) |
2249+ |
62371 |
二十余載金牌老企 研究所優(yōu)秀合供單位 您的原廠窗口 |
詢價(jià) | |||
VISHAY/威世 |
1926+ |
TO-220263 |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
VISHAY |
21+ |
TO-220 |
6000 |
絕對原裝現(xiàn)貨 |
詢價(jià) | ||
VISHAY |
1809+ |
TO-220 |
1675 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO220AB |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
Vishay(威世) |
23+ |
N/A |
589610 |
新到現(xiàn)貨 原廠一手貨源 價(jià)格秒殺代理! |
詢價(jià) | ||
VISHAY/威世 |
22+ |
TO220AB |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
VISHAY/威世通 |
23+ |
TO220AB |
6000 |
原裝正品，支持實(shí)單 |
詢價(jià) | ||
VISHAY/威世 |
22+ |
TO220 |
12000 |
只做原裝、原廠優(yōu)勢渠道、假一賠十 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO220 |
6000 |
只有原裝正品,老板發(fā)話合適就出 |
詢價(jià) |
相關(guān)規(guī)格書
更多- V40100C-E3/4W
- V40100PW-M3/4W
- V4014
- V40170PW-M3/4W
- V407YHQ
- V40D120C-M3/I
- V40DM120C-M3/I
- V4-1.5-0-SP-SM
- V4-1/4-0-SP
- V4-1-0-SP
- V4-2.5-0-SP-SM
- V420LA20AP
- V420LA40BP
- V420LA7P
- V420LC10P
- V420SM7
- V421DA40
- V421HG34
- V42254A1115C209
- V42254A2216B209
- V42254A262V19
- V42254B1100C960
- V42254-B1200-C480
- V42254B1201R960
- V42254-B2102-C963
- V42254B2201B640
- V42254-B2202-B320
- V42254-B2202-C960
- V42254R1591C456R
- V42MLA1206H-CUTTAPE
- V4-3.0-0-SP-SM
- V4-3/64-0-SP
- V430CH8
- V430CH8T
- V430MA3A
- V-430P103X9600
- V430RA16X2749
- V430RA22
- V430ZS05P
- V4330K
- V4344
- V4348
- V4500
- V4504
- V4518
相關(guān)庫存
更多- V40100PGW-M3/4W
- V40120C-E3/4W
- V40170C-M3/4W
- V401D-2
- V40D100C-M3/I
- V40DL45BP-M3/I
- V4-1.0-0-SP-SM
- V4-1/16-0-SP
- V4-1/8-0-SP
- V4-2.0-0-SP-SM
- V420LA10P
- V420LA40B
- V420LA40CP
- V420LA7PX3195
- V420LS40BP
- V421BA60
- V421DB40
- V42254A1115B215
- V42254A112V9
- V42254A2216C209
- V42254A5235B209
- V42254-B1200-B640
- V42254-B1200-C960
- V42254B1202R960
- V42254B2201B200
- V42254B2201C480
- V42254-B2202-C483
- V42254B2202C963
- V42MLA1206H
- V42MLA1206NH
- V4-3/16-0-SP
- V4-3/8-0-SP
- V430CH8S
- V430CH8T-CUTTAPE
- V430MA7B
- V-430P104X9400
- V430RA16X2767
- V430ZA05P
- V4330F
- V4340
- V4346
- V4-4.0-0-SP-SM
- V4502
- V4516
- V4520
