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5616

2-FUNCTION,4-DIGITLCDAUTOMOTIVECLOCK-PROGRAMMABLE

FEATURES ■DigitalTuningofCrystalFrequency ■PROMforStoringFrequencyCorrectionInformation ■12or24HourTimekeepingOption ■FlashingColon ■TwoSwitchesControlAllSettingFunctions ■HighNoiseImmunity ■InternalPower-UpResetCircuitry ■InternalVoltageRegulation

Allegro

Allegro MicroSystems

5616-RC

HighCurrentChokes

BournsBourns Electronic Solutions

伯恩斯

ALC5616

Ultra-LowPowerAudioCODECforMobileDevices

REALTEKRealtek Semiconductor Corp.

瑞昱瑞昱半導體股份有限公司

ALC5616-CG

Ultra-LowPowerAudioCODECforMobileDevices

REALTEKRealtek Semiconductor Corp.

瑞昱瑞昱半導體股份有限公司

ALC5616-CGT

Ultra-LowPowerAudioCODECforMobileDevices

REALTEKRealtek Semiconductor Corp.

瑞昱瑞昱半導體股份有限公司

AOZ5616QI

High-Current,High-PerformanceDrMOSPowerModule

GeneralDescription TheAOZ5616QIisahighefficiencysynchronousbuck powerstagemoduleconsistingoftwoasymmetrical MOSFETsandanintegrateddriver.TheMOSFETsare individuallyoptimizedforoperationinthesynchronous buckconfiguration.TheHigh-SideMOSFETisoptimized toachieve

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

BCP5616

LowpowerNPNTransistor

SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTORS ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBCP52-16ANDBCP53-16RESPECTIVELY APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

BCP5616Q

80VNPNMEDIUMPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features ?BVCEO>80V ?IC=1AHighContinuousCollectorCurrent ?ICM=2APeakPulseCurrent ?2WPowerDissipation ?LowSaturationVoltageVCE(SAT)

DIODES

Diodes Incorporated

BCP5616Q

NPNMEDIUMPOWERTRANSISTORSINSOT223

Features ?BVCEO>45V&80V ?IC=1AContinuousCollectorCurrent ?ICM=2APeakPulseCurrent ?2WPowerDissipation ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

BCP5616QTA

80VNPNMEDIUMPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features ?BVCEO>80V ?IC=1AHighContinuousCollectorCurrent ?ICM=2APeakPulseCurrent ?2WPowerDissipation ?LowSaturationVoltageVCE(SAT)

DIODES

Diodes Incorporated

BCP5616QTA

NPNMEDIUMPOWERTRANSISTORSINSOT223

Features ?BVCEO>45V&80V ?IC=1AContinuousCollectorCurrent ?ICM=2APeakPulseCurrent ?2WPowerDissipation ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

BCP5616QTC

80VNPNMEDIUMPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features ?BVCEO>80V ?IC=1AHighContinuousCollectorCurrent ?ICM=2APeakPulseCurrent ?2WPowerDissipation ?LowSaturationVoltageVCE(SAT)

DIODES

Diodes Incorporated

BCP5616QTC

NPNMEDIUMPOWERTRANSISTORSINSOT223

Features ?BVCEO>45V&80V ?IC=1AContinuousCollectorCurrent ?ICM=2APeakPulseCurrent ?2WPowerDissipation ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

BCP5616T

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features ?BVCEO>80V ?IC=1AHighContinuousCollectorCurrent ?ICM=2APeakPulseCurrent ?2WPowerDissipation ?LowSaturationVoltageVCE(SAT)

DIODES

Diodes Incorporated

BCP5616TA

NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223

Features ?BVCEO>45V,60V&80V ?IC=1AHighContinuousCollectorCurrent ?ICM=2APeakPulseCurrent ?2WPowerDissipation ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

BCP5616TC

NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223

Features ?BVCEO>45V,60V&80V ?IC=1AHighContinuousCollectorCurrent ?ICM=2APeakPulseCurrent ?2WPowerDissipation ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

BCP5616TQ

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features ?BVCEO>80V ?IC=1AHighContinuousCollectorCurrent ?ICM=2APeakPulseCurrent ?2WPowerDissipation ?LowSaturationVoltageVCE(SAT)

DIODES

Diodes Incorporated

BCP5616TQTA

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features ?BVCEO>80V ?IC=1AHighContinuousCollectorCurrent ?ICM=2APeakPulseCurrent ?2WPowerDissipation ?LowSaturationVoltageVCE(SAT)

DIODES

Diodes Incorporated

BCP5616TQTC

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features ?BVCEO>80V ?IC=1AHighContinuousCollectorCurrent ?ICM=2APeakPulseCurrent ?2WPowerDissipation ?LowSaturationVoltageVCE(SAT)

DIODES

Diodes Incorporated

BCX5616

NPNSILICONPLANARMEDIUMPOWERTRANSISTOR

SOT89NPNSILICONPLANARMEDIUMPOWERTRANSISTOR COMPLEMENTARYTYPE–BCX5316 PARTMARKINGDETAIL–BL

Zetex

Zetex Semiconductors

詳細參數(shù)

  • 型號:

    V5616XSE

  • 制造商:

    Assmann Electronics Inc

供應商型號品牌批號封裝庫存備注價格
Assmann
22+
NA
215
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詢價
24+
N/A
72000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
匯萬
23+
DIP2
11200
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詢價
VIIYONG/微容
23+
98000
詢價
VIIYONG/微容
24+
NA
860000
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詢價
香港維修佬
21+
NA
4600
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詢價
ST
QFP
396379
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PROMOS TECHNOLOGIES
23+
BGA
6500
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詢價
LITTELFUS
2016+
SMD
3000
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LITTELFUS
SMD
37526
只做原裝貨值得信賴
詢價
更多V5616XSE供應商 更新時間2025-1-8 10:08:00