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VBA1203M

N-Channel 200 V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBA1203M

N-Channel 200 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBA1203M_V01

N-Channel 200 V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1203M

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBE1203M

N-Channel200V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBFB1203M

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBL1203M

PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBM1203

PowerMOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBM1203M

PowerMOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBM1203M

N-Channel200V(D-S)MOSFET

FEATURES ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch ?DT-TrenchPowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBM1203M

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBMB1203M

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VRB1203(X)D-10WR2

negativedual/singleoutputDC-DCconverter

MORNSUNGuangzhou Jinshengyang Technology Co., Ltd

金升陽(yáng)廣州金升陽(yáng)科技有限公司

WI.DP1203-XXX-R

TrueUARTtoAntennaSolution

SEMTECH

Semtech Corporation

WST-1203BX

THISSPECIFICATIONAPPLIESTOTHEELECTROMAGNETICBUZZER

SOBERTON

Soberton Inc.

WST-1203BX

WashableType

SOBERTON

Soberton Inc.

WST-1203UX

WashableType

SOBERTON

Soberton Inc.

WST-1203UX

THISSPECIFICATIONAPPLIESTOTHEELECTROMAGNETICBUZZER

SOBERTON

Soberton Inc.

XE1203

SPARKQUENCHER

OKAYAOKAYA ELECTRIC INDUSTRIES CO., LTD.

岡谷電機(jī)工業(yè)株式會(huì)社

XE1203

Low-Power,integratedUHFtransceiver

[XEMICS] GENERALDESCRIPTION TheXE1203isasinglechiptransceiveroperatinginthe868and915MHzlicense-freeISM(IndustryScientificandMedical)frequencybands.Itshighlyintegratedarchitectureallowsforminimumexternalcomponentswhilemaintainingdesignflexibility.AllmajorRFco

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ATCDiversifiedElectronic
6
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ATC Diversified Electronics
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2
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SOIC-8
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con
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ST
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DIP-14
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更多VBA1203M供應(yīng)商 更新時(shí)間2024-12-31 15:00:00