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VF20120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) ?Componentinacco

VishayVishay Siliconix

威世科技威世科技半導體

VF20120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,per JESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導體

VF20120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF20120C_V01

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,per JESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導體

VF20120C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) ?Componentinacco

VishayVishay Siliconix

威世科技威世科技半導體

VF20120C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) ?Componentinacco

VishayVishay Siliconix

威世科技威世科技半導體

VF20120C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) ?Componentinacco

VishayVishay Siliconix

威世科技威世科技半導體

VF20120C_10

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF20120C_15

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VF20120C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    VF20120C

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY
23+
TO-220
8600
全新原裝現(xiàn)貨
 詢價
VISHAY
1735+
TO220F
6528
科恒偉業(yè)!只做原裝正品!假一賠十!
 詢價
VISHAY原裝
25+23+
TO-220F
23892
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
VISHAY原裝
24+
TO-220F
9860
一級代理
 詢價
VISHAY
2020+
TO220F
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
VISHAY
21+
TO220F
50
原裝現(xiàn)貨假一賠十
 詢價
VISHAY
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
中性
23+
TO220F-3
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VISHAY/威世
2022+
ITO-220A
12888
原廠代理 終端免費提供樣品
 詢價
VISHAY/威世
23+
TO-220
6000
原裝正品，支持實單
 詢價
更多VF20120C供應(yīng)商 更新時間2025-3-28 14:02:00

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