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VF30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF30120C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF30120C_V01

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF30120C-E3

Trench MOS Schottky technology

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263AB

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF30120C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF30120C_10

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF30120C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF30120C-M3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF30120C-E3/4W

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-220-3 全封裝,隔離接片 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述:DIODE ARRAY SCHOTTKY 120V ITO220

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VF30120C-M3/4W

包裝:卷帶(TR) 封裝/外殼:TO-220-3 全封裝,隔離接片 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述:DIODE SCHOTTKY 30A 120V ITO220AB

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

詳細(xì)參數(shù)

  • 型號:

    VF30120C

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
Vishay(威世)
23+
標(biāo)準(zhǔn)封裝
8248
原廠直銷,大量現(xiàn)貨庫存,交期快。價格優(yōu),支持賬期
詢價
VISHAY
23+
TO-220
8600
全新原裝現(xiàn)貨
詢價
VISHAY
21+
ITO-220AB
6000
絕對原裝現(xiàn)貨
詢價
VISHAY/威世
23+
TO-220
90000
只做原廠渠道價格優(yōu)勢可提供技術(shù)支持
詢價
VISHAY/威世
23+
TO-220
10000
公司只做原裝正品
詢價
VISHAY/威世
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
VISHAY/威世
2022+
TO-220
12888
原廠代理 終端免費(fèi)提供樣品
詢價
-
23+
TO-220F
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
詢價
VISHAY/威世通
23+
TO-220
6000
原裝正品,支持實(shí)單
詢價
VISHAY/威世
22+
TO-220F
50000
只做正品原裝,假一罰十,歡迎咨詢
詢價
更多VF30120C供應(yīng)商 更新時間2024-11-2 22:59:00