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VI30100SG

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100SG

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICAL

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100SG

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100SG-E3

High efficiency operation

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100SG-E3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100SG-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100SG-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100SG-E3

High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI30100SG-E3/4W

Package：TO-262-3，長引線，I2Pak，TO-262AA；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 100V 30A TO262AA

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VI30100SGHM3/4W

Package：TO-262-3，長引線，I2Pak，TO-262AA；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 30A 100V TO-262AA

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

詳細參數(shù)

  • 型號：

    VI30100SG

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY
TO-262
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
VISHAY
23+
TO-262
8600
全新原裝現(xiàn)貨
 詢價
24+
TO-262
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
VISHAY
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VISHAY
22+
TO-262
8900
英瑞芯只做原裝正品!!!
 詢價
VISHAY
13+
TO-262
1265
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
VISHAY/威世
22+
TO-262
100000
代理渠道/只做原裝/可含稅
 詢價
VISHAY/威世
24+
TO-262
12000
原裝正品真實現(xiàn)貨杜絕虛假
 詢價
VISHAY/威世
24+
TO-262
60000
詢價
Vishay/GeneralSemiconduc
24+
TO-262AA
933
詢價
更多VI30100SG供應(yīng)商 更新時間2025-5-6 14:00:00

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