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VNS1NV04DP-E

OMNIFET II fully autoprotected Power MOSFET

Description TheVNS1NV04DP-EisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPower?M0-3technology:theyareintendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications.Builtin

STMICROELECTRONICSSTMicroelectronics

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VNS1NV04DP-E

包裝：管件 封裝/外殼：8-SOIC（0.154"，3.90mm 寬） 類別：集成電路（IC） 配電開關(guān)，負(fù)載驅(qū)動器 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO

STMICROELECTRONICSSTMicroelectronics

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VND1NV04

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VND1NV04

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect

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VND1NV04-E

forcarbodyapplications

Description TheL5958includes6linearvoltageregulatorsanda2Apowerswitch,workingdownto4.5Vbatterylevel.Allthevoltageregulatorscanbeswitchedoffthroughthethreeenablepins. Features ■L5958sixoutputs: –8.5V@200mA –5.0V@300mA –3.3V@250mA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VND1NV04-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VND1NV04TR

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNN1NV04

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNN1NV04

fullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNN1NV04

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNN1NV04P-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNN1NV04PTR-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNN1NV04TR

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNN1NV04TR-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04

fullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

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VNS1NV04

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04D

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04D

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04D-E

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

產(chǎn)品屬性

  • 產(chǎn)品編號：

    VNS1NV04DP-E

  • 制造商：

    STMicroelectronics

  • 類別：

    集成電路（IC） > 配電開關(guān)，負(fù)載驅(qū)動器

  • 系列：

    OMNIFET II?, VIPower?

  • 包裝：

    管件

  • 開關(guān)類型：

    通用

  • 輸出數(shù)：

    2

  • 比率 - 輸入：

    1：1

  • 輸出配置：

    低端

  • 輸出類型：

    N 通道

  • 接口：

    開/關(guān)

  • 電壓 - 負(fù)載：

    36V（最大）

  • 電壓 - 供電 (Vcc/Vdd)：

    不需要

  • 電流 - 輸出（最大值）：

    1.7A

  • 導(dǎo)通電阻（典型值）：

    250 毫歐（最大）

  • 輸入類型：

    非反相

  • 故障保護(hù)：

    限流（固定），超溫，過壓

  • 工作溫度：

    -40°C ~ 150°C（TJ）

  • 安裝類型：

    表面貼裝型

  • 供應(yīng)商器件封裝：

    8-SOIC

  • 封裝/外殼：

    8-SOIC（0.154"，3.90mm 寬）

  • 描述：

    IC PWR DRIVER N-CHANNEL 1

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
STM
15+
原廠原裝
4000
進(jìn)口原裝現(xiàn)貨假一賠十
 詢價(jià)
ST
23+
20000
原裝現(xiàn)貨,可追溯原廠渠道
 詢價(jià)
ST
10+
SOP8
6000
原裝現(xiàn)貨價(jià)格有優(yōu)勢量多可發(fā)貨
 詢價(jià)
ANALOG
100
STM
4000
詢價(jià)
ST
1701+
SO-8
7500
只做原裝進(jìn)口,假一罰十
 詢價(jià)
STMicroelectronics
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價(jià)
ST
1728+
SOP-8
6528
只做進(jìn)口原裝正品假一賠十!
 詢價(jià)
STM
23+
SOP8
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
STMicroelectronics
23+
8-SO
66800
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！
 詢價(jià)
ST
20+
na
65790
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價(jià)
更多VNS1NV04DP-E供應(yīng)商 更新時(shí)間2025-1-11 8:48:00

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