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VNS1NV04D

??MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04D

??MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04D13TR

??MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04D-E

??MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04DP-E

OMNIFET II fully autoprotected Power MOSFET

Description TheVNS1NV04DP-EisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPower?M0-3technology:theyareintendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications.Builtin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04DPTR-E

OMNIFET II fully autoprotected Power MOSFET

Description TheVNS1NV04DP-EisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPower?M0-3technology:theyareintendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications.Builtin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04DP-E

Package：8-SOIC（0.154"，3.90mm 寬）；包裝：管件 類別：集成電路（IC） 配電開(kāi)關(guān)，負(fù)載驅(qū)動(dòng)器 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04DPTR-E

Package：8-SOIC（0.154"，3.90mm 寬）；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 配電開(kāi)關(guān)，負(fù)載驅(qū)動(dòng)器 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04DTR-E

Package：8-SOIC（0.154"，3.90mm 寬）；包裝：管件 類別：集成電路（IC） 配電開(kāi)關(guān)，負(fù)載驅(qū)動(dòng)器 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04P-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    VNS1NV04D

  • 功能描述：

    MOSFET N-Ch 40V 1.7A Omni

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
STMICROELECT
2021+
SOP8
9450
原裝現(xiàn)貨。
 詢價(jià)
ST/意法
23+
SOP-8
98900
原廠原裝正品現(xiàn)貨!!
 詢價(jià)
ST
2024
SOP-8
58209
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力高端行業(yè)供應(yīng)商
 詢價(jià)
ST
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
st
2339+
sop-8
5000
進(jìn)口原裝現(xiàn)貨供應(yīng)
 詢價(jià)
ST
24+
39SOP8
32591
詢價(jià)
STM
2016+
SOP-8
3500
本公司只做原裝,假一罰十,可開(kāi)17%增值稅發(fā)票!
 詢價(jià)
ST
17+
SOP8
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
ST
23+
SOP-8
2100
優(yōu)勢(shì)庫(kù)存
 詢價(jià)
ST
2016+
SOP8
6528
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
 詢價(jià)
更多VNS1NV04D供應(yīng)商 更新時(shí)間2025-2-2 13:52:00

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