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VND1NV04

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VND1NV04

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VND1NV04-E

forcarbodyapplications

Description TheL5958includes6linearvoltageregulatorsanda2Apowerswitch,workingdownto4.5Vbatterylevel.Allthevoltageregulatorscanbeswitchedoffthroughthethreeenablepins. Features ■L5958sixoutputs: –8.5V@200mA –5.0V@300mA –3.3V@250mA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VND1NV04-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VND1NV04TR

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNN1NV04

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNN1NV04

fullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNN1NV04

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNN1NV04P-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNN1NV04PTR-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNN1NV04TR

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNN1NV04TR-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04

fullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04D

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04D

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04D-E

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04DP-E

OMNIFETIIfullyautoprotectedPowerMOSFET

Description TheVNS1NV04DP-EisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPower?M0-3technology:theyareintendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications.Builtin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNS1NV04DPTR-E

OMNIFETIIfullyautoprotectedPowerMOSFET

Description TheVNS1NV04DP-EisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPower?M0-3technology:theyareintendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications.Builtin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ST/意法
21+
SOP8
7650
優(yōu)勢供應(yīng) 實(shí)單必成 可開增值稅13點(diǎn)
詢價(jià)
ST/意法
23+
SOP8
8000
原裝正品實(shí)單必成
詢價(jià)
ST/意法
23+
SOP8
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
ST/意法
2022+
SO-8
8000
只做原裝支持實(shí)單,有單必成。
詢價(jià)
ST/意法
21+
SOP-8
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價(jià)
ST/意法
22+
SOP-8
50000
只做原裝假一罰十,歡迎咨詢
詢價(jià)
ST/意法
22+
SOP-8
32000
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
ST/意法
2023+
SO-8
50000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
詢價(jià)
ST/意法
19+
SOP-8
1000
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ST/意法
VNS1NV05DPTR 其他被動(dòng)元件
ST/意法
12500
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更多VNS1NV04DPTR-E-CUTTAPE供應(yīng)商 更新時(shí)間2025-1-11 14:04:00