首頁 >VS-GT100DA120UF>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
VS-GT100DA120UF | Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A FEATURES ?TrenchIGBThighspeed ?SquareRBSOA ?HEXFRED?lowQrr,lowswitchingenergy ?PositiveVCE(on)temperaturecoefficient ?Fullyisolatedpackage ?Verylowinternalinductance(?5nHtypical) ?Industrystandardoutline ?ULapprovedfileE78996 ?Materialcategorization:fo | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
VS-GT100DA120UF | Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A FEATURES ?TrenchIGBThighspeed ?SquareRBSOA ?HEXFRED?lowQrr,lowswitchingenergy ?PositiveVCE(on)temperaturecoefficient ?Fullyisolatedpackage ?Verylowinternalinductance(?5nHtypical) ?Industrystandardoutline ?ULapprovedfileE78996 ?Materialcategorization:fo | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
VS-GT100DA120UF | Package:SOT-227-4,miniBLOC;包裝:管件 類別:分立半導體產(chǎn)品 晶體管 - IGBT - 模塊 描述:IGBT MOD 1200V 187A 890W SOT227 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | |
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A FEATURES ?TrenchIGBThighspeed ?SquareRBSOA ?HEXFRED?lowQrr,lowswitchingenergy ?PositiveVCE(on)temperaturecoefficient ?Fullyisolatedpackage ?Verylowinternalinductance(?5nHtypical) ?Industrystandardoutline ?ULapprovedfileE78996 ?Materialcategorization:fo | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
BoostchopperNPTIGBTPowerModule | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
BoostchopperFastTrenchFieldStopIGBTPowerModule | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
InsulatedGateBipolarTransistor(TrenchIGBT),100A FEATURES ?TrenchIGBTtechnologywithpositivetemperaturecoefficient ?SquareRBSOA ?10μsshortcircuitcapability ?HEXFRED?antiparalleldiodeswithultrasoftreverserecovery ?TJmaximum=150°C ?Fullyisolatedpackage ?Verylowinternalinductance(?5nHtypical) | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
InsulatedGateBipolarTransistor(TrenchIGBT),100A FEATURES ?TrenchIGBTtechnologywithpositive temperaturecoefficient ?SquareRBSOA ?10μsshortcircuitcapability ?HEXFRED?antiparalleldiodeswithultrasoftreverse recovery ?TJmaximum=150°C ?Fullyisolatedpackage ?Verylowinternalinductance(?5nHtypical) ?Industry | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
NPNPOWERDARLUNGTONMODULES100A1200V NPNPowerDarlungtonModules100A,1200V | SemikronSemikron International 賽米控丹佛斯 | Semikron | ||
InsulatedGateBipolarTransistor(TrenchIGBT),100A FEATURES ?TrenchIGBTtechnologywithpositive temperaturecoefficient ?SquareRBSOA ?10μsshortcircuitcapability ?HEXFRED?antiparalleldiodeswithultrasoftreverse recovery ?TJmaximum=150°C ?Fullyisolatedpackage ?Verylowinternalinductance(?5nHtypical) ?Industry | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay |
產(chǎn)品屬性
- 產(chǎn)品編號:
VS-GT100DA120UF
- 制造商:
Vishay General Semiconductor - Diodes Division
- 類別:
分立半導體產(chǎn)品 > 晶體管 - IGBT - 模塊
- 系列:
HEXFRED?
- 包裝:
管件
- IGBT 類型:
溝道
- 配置:
單路
- 不同?Vge、Ic 時?Vce(on)(最大值):
2.55V @ 15V,100A
- 輸入:
標準
- NTC 熱敏電阻:
無
- 工作溫度:
-40°C ~ 150°C(TJ)
- 安裝類型:
底座安裝
- 封裝/外殼:
SOT-227-4,miniBLOC
- 供應商器件封裝:
SOT-227
- 描述:
IGBT MOD 1200V 187A 890W SOT227
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Vishay General Semiconductor - |
24+ |
SOT-227-4,miniBLOC |
30000 |
晶體管-分立半導體產(chǎn)品-原裝正品 |
詢價 | ||
Vishay Semiconductors |
23+ |
Module |
1262 |
原廠原裝正品現(xiàn)貨,代理渠道,支持訂貨!!! |
詢價 | ||
VISHAY/威世 |
2021+ |
SOT-227 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
Vishay Semiconductor Diodes Di |
2022+ |
SOT-227 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
Vishay General Semiconductor - |
23+ |
標準封裝 |
2000 |
全新原裝正品現(xiàn)貨直銷 |
詢價 | ||
24+ |
N/A |
72000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
Vishay Semiconductor Diodes Di |
22+ |
SOT227 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
VISHAY |
11+ |
SOT-227 |
160 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||
VISHAY/威世 |
2020+ |
NA |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
VISHAY/威世 |
2022+ |
SOT-227 |
8000 |
只做原裝支持實單,有單必成。 |
詢價 |
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