| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
VT10 | Multifunction Voltage Tester | EXTECH Extech Instruments Corporation. | EXTECH | |
HIGH VOLTAGE 50 mA SILICON RECTIFIERS HIGHVOLTAGE50mASILICONRECTIFIERS ●SMALLSIZEMOLDEDPACKAGE ●PRV10,000TO15,000VOLTS ●FASTRECOVERY(R_SERIES) ●AVALANCHECHARACTERISTICS ●LOWLEAKAGE | edi Electronic devices inc. | edi | ||
Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106 (forTO-220AB,ITO-220ABandTO-262AApacka | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106 (forTO-220AB,ITO-220ABandTO-262AApacka | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnologyGen2 ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-2 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnologyGen2 ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-2 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier FEATURES ?Lowprofilepackage ?Idealforautomatedplacement ?TrenchMOSSchottkytechnology ?Lowpowerlosses,highefficiency ?Lowforwardvoltagedrop ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C ?Materialcategorization:fordefinitionsofcompliance pleasesee | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC ?Halogen-freeaccordingtoI | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?TJ200°Cmax.insolarbypassmodeapplication ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?TJ200°Cmax.insolarbypassmodeapplication ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Trench MOS Schottky technology FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220AB,an | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號：
VT10
- 制造商：
Extech Instruments Corporation
- 功能描述：
VOLTAGE DETECTOR MULTIFUNCTION
- 制造商：
Extech
- 功能描述：
Multifunction Voltage Tester
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VOLTERRA |
13+ |
6184 |
原裝分銷 |
詢價 | |||
VOLTERRA |
2016+ |
QFN |
6528 |
只做進(jìn)口原裝現(xiàn)貨!假一賠十! |
詢價 | ||
16+ |
QFN |
2500 |
進(jìn)口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | |||
VOLTERRA |
24+ |
QLP20 |
4897 |
絕對原裝!現(xiàn)貨熱賣! |
詢價 | ||
VOLT |
24+ |
BGA |
6868 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
VOLTERRA |
23+ |
BGA |
8890 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價 | ||
VOLTERRA |
24+ |
BGA |
4481 |
詢價 | |||
VOLTERRA |
23+ |
QLP20 |
50000 |
原裝正品,假一罰十 |
詢價 | ||
VOLTERRA |
2339+ |
QFN |
5989 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
VISHAY |
17+ |
TO220-3 |
6200 |
詢價 |
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