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BF904AWR

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904AWR

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904AWR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904R

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904R

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904R

N-channeldualgateMOS-FETs

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904R

N-channeldualgateMOS-FETs

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904WR

N-channeldual-gateMOS-FET

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES ?Speciallyde

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BGD904

CATVamplifiermodules

DESCRIPTION HybridamplifiermodulesinaSOT115Jpackageoperatingwithavoltagesupplyof24V(DC). Bothmodulesareelectricallyidenticalonlythepinningisdifferent. FEATURES ?Excellentlinearity ?Extremelylownoise ?Excellentreturnlossproperties ?Siliconnitridepassivatio

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BGD904

860MHz,20dBgainpowerdoubleramplifier

DESCRIPTION HybridamplifiermodulesinaSOT115Jpackageoperatingwithavoltagesupplyof24V(DC).Bothmodulesareelectricallyidentical,onlythepinningisdifferent. FEATURES ?Excellentlinearity ?Extremelylownoise ?Excellentreturnlossproperties ?Siliconnitridepassivatio

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    WE904

  • 功能描述:

    0.1 - 1GHx Single Chip FM Transceiver

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原裝WOLFSON
QFP48
15620
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WINEDGE
23+
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3000
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2987
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23+
DIP
50000
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WINBOND/華邦
23+
DIP
28533
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20000
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24+
NA/
3517
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24+
DIP16
284
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WIN
24+
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6500
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N/A
24+
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29954
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更多WE904供應(yīng)商 更新時(shí)間2025-4-16 17:57:00