WED2DG472512V65D2中文資料WEDC數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The WED2DG472512V is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The Module contains sixteeen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilayer FR4 Substrate. The Module Architecture is defi ned as a Sync/SyncBurst, Pipeline, with support for either linear or sequential burst. This Module provides high performance, 3-1-1-1 accesses when used in Burst Mode, and when used in Synchronous Only Mode, provides a high performance, data access every second cycle.

FEATURES

■ 4x512Kx72 Synchronous, Synchronous Burst

■ Pipeline Architecture; Single Cycle Deselect

■ Linear and Sequential Burst Support via MODE pin

■ Clock Controlled Registered Module Enable (EM#)

■ Clock Controlled Registered Bank Enables (E1#, E2#, E3#, E4#)

■ Clock Controlled Byte Write Mode Enable (BWE#)

■ Clock Controlled Byte Write Enables (BW1# - BW8#)

■ Clock Controlled Registered Address

■ Clock Controlled Registered Global Write (GW#)

■ Asynchronous Output Enable (G#)

■ Internally Self-Timed Write

■ Individual Bank Sleep Mode Enables (ZZ1, ZZ2, ZZ3, ZZ4)

■ Gold Lead Finish

■ 3.3V ± 10 Operation

■ Frequency(s): 200, 166, 150, and 133MHz

■ Access Speed(s): tKHQV = 3.0, 3.5, 3.7, and 4.0ns

■ Common Data I/O

■ High Capacitance (30pF) Drive, at Rated Access Speed

■ Single Total Array Clock

■ Multiple Vcc and Gnd for Improved Noise Immunity