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WFU1N60

Silicon N-Channel MOSFET

GeneralDescription ThisPowerMOSFETisproducedusingWinsemisadvancedplanarstripe,VDMOStechnology.Thislatesttechnologyhasbeenespeciallydesignedtominimizeon-stateresistance,haveahighruggedavalanchecharacteristics.Thisdevicesisspeciallywellsuitedforhighefficiencysw

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司

WFU1N60C

Silicon N-Channel MOSFET

GeneralDescription ThisPowerMOSFETisproducedusingWinsemi’sadvancedplanarstripe,VDMOStechnology.Thislatesttechnologyhasbeenespeciallydesignedtominimizeon-stateresistance,haveahighruggedavalanchecharacteristics.Thisdevicesisspeciallywellsuitedforhighefficien

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司

WFU1N60N

Silicon N-Channel MOSFET

GeneralDescription ThisPowerMOSFETisproducedusingWinsemi’sadvancedplanarstripe,VDMOStechnology.Thislatesttechnologyhasbeenespeciallydesignedtominimizeon-stateresistance,haveahighruggedavalanchecharacteristics.Thisdevicesisspeciallywellsuitedforhighefficiency

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司

1N60

SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors

FEATURES ?Hermeticallysealed ?Breakdownvoltagerange6.8-200volts ?Glasspassivatedjunction ?Excellentclampingcapability ?Lowzenerimpedance ?100surgetested ?-55°Cto+150°C ?Bi-directional MAXIMUMRATING ?PeakPulsePower(Ppk):15000Watts(10x1000μs)@25°C(seedi

Littelfuselittelfuse

力特力特公司

1N60

GOLDBONDEDGERMANIUMDIODE

GermaniumGlassDiode Features ?GermaniumGlassDiode ?RoHSCompliance

ETCList of Unclassifed Manufacturers

未分類制造商

1N60

JEDECDO-7PACKAGE

JEDECDO-7PACKAGE

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1N60

SchottkyBarrierDiode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

1N60

GERMANIUMDIODES

Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione

DAESAN

Daesan Electronics Corp.

1N60

SMALLSIGNALSCHOTTKYDIODE

VOLTAGERANGE:40V CURRENT:0.03A FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforwardcharacteristics

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

1N60

1.2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow

UTCUnisonic Technologies

友順友順科技股份有限公司

1N60

SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS

Features: *HighReliability *LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching

WEITRON

Weitron Technology

1N60

600VN-ChannelMOSFET

Features ?HighReliability ?LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber ?MoistureSensitivity:Level1perJ-STD-020C MaximumRatings ?Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

1N60

SchottkyBarrierRectifier

Features ?HighReliability ?LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber ?MoistureSensitivity:Level1perJ-STD-020C MaximumRatings ?Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

1N60

SMALLSIGNALSCHOTTKYDIODES

FEATURES ?Metal-on-siliconjunction,majoritycarrierconduction ?Highcurrentcapability,Lowforwardvoltagedrop ?ExtremelylowreversecurrentIR ?Ultraspeedswitchingcharacteristics ?Smalltemperaturecoefficientofforwardcharacteristics ?Satisfactorywavedetectionefficiency

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集團(tuán)濟(jì)南晶恒電子有限責(zé)任公司

1N60

SMALLSIGNALSCHOTTKYDIODES

ReverseVoltage-40to45Volts ForwardCurrent-0.03/0.05Amperes FEATURES Fastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed 250C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

1N60

SMALLSIGNALSCHOTTKYDIODE

FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio

DIOTECH

Diotech Company.

1N60

1.2Amps,600/650VoltsN-CHANNELMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

1N60

SchottkyBarrierRectifier

Features ?HighReliability ?LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber ?LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) ?MoistureSensitivityLevel1 MaximumRatings ?Storage&

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

1N60

Lowforwardvoltagedrop-lowpowerconsumption

FEATURES Lowforwardvoltagedrop -lowpowerconsumption Thirtyyearsofprovenreliability -onemillionhoursmeantimebetweenfailures(MTBF) Verylownoiselevel Metallurgicallybonded

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

1N60

45VDetectionswitchtube

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

PDF上傳者:深圳市福田區(qū)吉富昌電子商行

詳細(xì)參數(shù)

  • 型號(hào):

    WFU1N60

  • 制造商:

    WINSEMI

  • 制造商全稱:

    WINSEMI

  • 功能描述:

    Silicon N-Channel MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
N/A
24+
TO-251
1192
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WISDOM
2020+
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350000
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WISDOM
1822+
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9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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WISDOM
06+
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6000
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WISDOM
18+
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41200
原裝正品,現(xiàn)貨特價(jià)
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WISDOM
21+
TO-251
6000
絕對(duì)原裝現(xiàn)貨
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WISDOM
2020+
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16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
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WID
22+
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20000
保證原裝正品,假一陪十
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W
23+
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10000
公司只做原裝正品
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WISDOM
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
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更多WFU1N60供應(yīng)商 更新時(shí)間2024-12-24 10:20:00