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WFU1N60

Silicon N-Channel MOSFET

GeneralDescription ThisPowerMOSFETisproducedusingWinsemisadvancedplanarstripe,VDMOStechnology.Thislatesttechnologyhasbeenespeciallydesignedtominimizeon-stateresistance,haveahighruggedavalanchecharacteristics.Thisdevicesisspeciallywellsuitedforhighefficiencysw

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司

WFU1N60C

Silicon N-Channel MOSFET

GeneralDescription ThisPowerMOSFETisproducedusingWinsemi’sadvancedplanarstripe,VDMOStechnology.Thislatesttechnologyhasbeenespeciallydesignedtominimizeon-stateresistance,haveahighruggedavalanchecharacteristics.Thisdevicesisspeciallywellsuitedforhighefficien

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司

WFU1N60N

Silicon N-Channel MOSFET

GeneralDescription ThisPowerMOSFETisproducedusingWinsemi’sadvancedplanarstripe,VDMOStechnology.Thislatesttechnologyhasbeenespeciallydesignedtominimizeon-stateresistance,haveahighruggedavalanchecharacteristics.Thisdevicesisspeciallywellsuitedforhighefficiency

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司

1N60

SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors

FEATURES ?Hermeticallysealed ?Breakdownvoltagerange6.8-200volts ?Glasspassivatedjunction ?Excellentclampingcapability ?Lowzenerimpedance ?100surgetested ?-55°Cto+150°C ?Bi-directional MAXIMUMRATING ?PeakPulsePower(Ppk):15000Watts(10x1000μs)@25°C(seedi

Littelfuselittelfuse

力特力特公司

1N60

GOLDBONDEDGERMANIUMDIODE

GermaniumGlassDiode Features ?GermaniumGlassDiode ?RoHSCompliance

ETCList of Unclassifed Manufacturers

未分類制造商

1N60

JEDECDO-7PACKAGE

JEDECDO-7PACKAGE

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1N60

SchottkyBarrierDiode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

1N60

GERMANIUMDIODES

Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione

DAESAN

Daesan Electronics Corp.

1N60

SMALLSIGNALSCHOTTKYDIODE

VOLTAGERANGE:40V CURRENT:0.03A FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforwardcharacteristics

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

1N60

1.2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow

UTCUnisonic Technologies

友順友順科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    WFU1N60

  • 制造商：

    WINSEMI

  • 制造商全稱：

    WINSEMI

  • 功能描述：

    Silicon N-Channel MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
N/A
24+
TO-251
1192
詢價(jià)
WISDOM
2020+
TO-251
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
 詢價(jià)
WISDOM
1822+
TO-251
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
WISDOM
06+
TO-251
6000
絕對(duì)原裝自己現(xiàn)貨
 詢價(jià)
WISDOM
18+
TO-251
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
WID
22+
TO-251
20000
保證原裝正品,假一陪十
 詢價(jià)
WISDOM
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
WISDOM
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
W
22+
TO-251
6000
十年配單,只做原裝
 詢價(jià)
WISDOM
22+
TO-251
8900
英瑞芯只做原裝正品!!!
 詢價(jià)
更多WFU1N60供應(yīng)商 更新時(shí)間2025-4-24 16:00:00

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