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07N65

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

AM07N65

MOSFET650V,7AN-CHANNEL

FEATURE ?RoHSCompliant ?RDS(ON),typ.=1.2Ω@VGS=10V ?LowGateChargeMinimizeSwitchingLoss ?FastRecoveryBodyDiode DESCRIPTION TheAM07N65isavailableinTO220FPackage. APPLICATION ?Adaptor ?Charger ?SMPSStandbyPower

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

CEB07N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB07N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB07N65LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB07N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED07N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,6A,RDS(ON)=1.45W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED07N65LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,5.9A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED07N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,6.2A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF07N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
WAYON/維安
22+
T0-252
9000
原裝正品,支持實單!
 詢價
WAYON
21+
TO252
8000
原包裝原標(biāo)現(xiàn)貨,假一罰十,
 詢價
WAYON
24+
TO252
9000
只做原裝正品 有掛有貨 假一賠十
 詢價
WAYON
21+
TO252
8000
全新原裝
 詢價
維安
23+
TO252
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
24+
N/A
57000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
維安
2023
TO-252
2580
原廠代理渠道,正品保障
 詢價
2501
原裝現(xiàn)貨
 詢價
WAYON/維安
23+
NA
6800
原裝正品,力挺實單
 詢價
WM
22+
13568
全新原裝正品
 詢價
更多WMO07N65FD供應(yīng)商 更新時間2025-2-8 16:42:00

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