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WSI06018W-1R0M	文件：661.91 Kbytes Page：17 Pages	WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI
WSI06018W-1R0M	文件：661.91 Kbytes Page：17 Pages	WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI
WSI06018W-1R0M	文件：661.91 Kbytes Page：17 Pages	WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI
WSI06018W-1R0M	文件：661.91 Kbytes Page：17 Pages	WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI
WSI06018W-1R0M	文件：661.91 Kbytes Page：17 Pages	WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI
WSI06018W-1R0M	文件：661.91 Kbytes Page：17 Pages	WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI
WSI06018W-1R0M	文件：661.91 Kbytes Page：17 Pages	WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI
WSI06018W-1R0M	文件：661.91 Kbytes Page：17 Pages	WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI
WSI06018W-1R0M	文件：661.91 Kbytes Page：17 Pages	WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI
WSI06018W-1R0M	文件：661.91 Kbytes Page：17 Pages	WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI
WSI06018W-1R0M	文件：661.91 Kbytes Page：17 Pages	WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI
WSI06018W-1R0M	文件：661.91 Kbytes Page：17 Pages	WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI
WSI06018W-1R0M	文件：661.91 Kbytes Page：17 Pages	WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI
WSI06018W-1R0M	文件：661.91 Kbytes Page：17 Pages	WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI
WSI06018W-1R0M	文件：661.91 Kbytes Page：17 Pages	WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI
WSI06018W-1R0M	文件：661.91 Kbytes Page：17 Pages	WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI
WSI06018W-1R0M	文件：661.91 Kbytes Page：17 Pages	WIRE WOUND SMD INDUCTOR ●FEATURE 1.Highperformance(Isat)realizedbymetaldustcore. 2.LowlossrealizedwithlowDCR 3.Capableofcorrespondinghighfrequency 4.OperatingTemperature:-40~+125℃ 5.CompliantwithAEC-Q200 ●APPLICATION Arrays(FPGA),POLConverters,PortablePowerLikePDA,Digital Came	AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技	AITSEMI

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市鵬順微電子科技有限公司	WSI25/110x38-1966020000	Weidmuller	2022+	原廠原包裝	6800	全新原裝支持表配單中國著名電子元器件獨(dú)立分銷	詢價(jià)
深圳市賽特興科技有限公司	WSI27010L	WSI	QQ咨詢	DIP	832	全新原裝研究所指定供貨商	詢價(jià)
深圳市達(dá)恩科技有限公司	WSI27C010	WSI	18+	CLCC	185	進(jìn)口原裝正品優(yōu)勢供應(yīng)	詢價(jià)
深圳市毅創(chuàng)弘電子科技有限公司	WSI27C010	WSI	23+	CLCC	66800	原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源！	詢價(jià)
深圳市萊克訊科技有限公司	WSI27C010	AD		DIP-8	2230	只做進(jìn)口原裝!假一賠百!自己庫存價(jià)優(yōu)!	詢價(jià)
深圳市航宇科工半導(dǎo)體有限公司	WSI27C010	WSI	21+	CLCC	645	航宇科工半導(dǎo)體-央企合格優(yōu)秀供方!	詢價(jià)
深圳市瑞祥輝半導(dǎo)體有限公司	WSI27C010	WSI	2318+	CLCC	4862	只做進(jìn)口原裝!假一賠百!自己庫存價(jià)優(yōu)!	詢價(jià)
深圳市一線半導(dǎo)體有限公司	WSI27C010-12DMB	WSI	24+	DIP	10		詢價(jià)
深圳市博浩通科技有限公司	WSI27C010L-10	WSI	23+	CDIP-32	1002	優(yōu)勢庫存	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	WSI27C010L-10DMB	WSI	23+	DIP	5000	原裝正品,假一罰十	詢價(jià)

更多WSI06018W-1R0M供應(yīng)商更新時(shí)間2025-1-8 15:00:00

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