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YJ7N65CH

N-Channel Enhancement Mode Mosfet

YANGJIEYangzhou yangjie electronic co., ltd

揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司

7N65

7.4Amps,650VoltsN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

7N65

7Amps,650Volts7Amps,650Volts

DESCRIPTION TheUTC7N65isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCUnisonic Technologies

友順友順科技股份有限公司

7N65

7Amps,650VoltsN-CHANNELMOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實(shí)業(yè)重慶平偉實(shí)業(yè)股份有限公司

7N65

N-Channel650V(D-S)PowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

7N65

650VN-ChannelPowerMOSFET

Features ●RDS(ON)

DYELECDIYI Electronic Technology Co., Ltd.

迪一電子山東迪一電子科技有限公司

7N65

DrainCurrentID=7A@TC=25C

?FEATURES ?DrainCurrentID=7A@TC=25℃ ?DrainSourceVoltage :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V ?AvalancheEnergySpecified ?FastSwitching ?APPLICATIONS ?Highspeedswitchingapplicationsinpowersupplies ?PWM

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

7N65

N-CHANNELPOWERMOSFET

■DESCRIPTION 7N607N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswitch

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

7N65

7.4A,650VN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

7N65

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

7N65

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description 650VN-CHANNELENHANCEMENTMODEPOWERMOSFET Features ?RDS(ON)=1.27Ω(Max.)@VGS=10V,ID=3.5A ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability Application ?DC-DC&DC-ACConverters ?UninterruptiblePowerSupply(UPS) ?SwitchModeLowPowerSu

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司

7N65

N-channelpowerMOStube

Features *VDS(V)=650V *RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司(簡稱UMW?)

7N65

N-CHANNELMOSFET

FEATURES RDS(ON)=1.2Ω@VGS=10V Ultralowgatecharge LowreversetransferCapacitance Fastswitchingcapability Avalancheenergytested Improveddv/dtcapability,highruggedness APPLICATIONS Highefciencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge L

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

7N65A

7A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi

UTCUnisonic Technologies

友順友順科技股份有限公司

7N65A

7A650VN-channelenhancementmodefieldeffecttransistor

7A650VN-channelenhancementmodefieldeffecttransistor Performancecharacteristics: ?Fastswitchingspeed ?Lowon-resistance ?Lowreversetransfercapacitance ?Lowgatecharge ?100singlepulseavalancheenergytest ?Improveddv/dtcapability

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

7N65B

7Amps,650VoltsN-CHANNELMOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實(shí)業(yè)重慶平偉實(shí)業(yè)股份有限公司

7N65C

650VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

7N65D

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

7N65F

7Amps,650VoltsN-CHANNELMOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實(shí)業(yè)重慶平偉實(shí)業(yè)股份有限公司

7N65F

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

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