ZUMT618

NPN SILICON POWER(SWITCHING) TRANSISTOR

FEATURES *500mWPOWERDISSIPATION *ICCONT1.25A *3APeakPulseCurrent *ExcellentHFECharacteristicsUpto3A(pulsed) *ExtremelyLowEquivalentOnResistance;RCE(sat) APPLICATIONS *Cordedtelecoms. *BoostfunctionsinDC-DCconverters *Motordriverfunctions

ZUMT618

Super323? SOT323 NPN SILICON POWER(SWITCHING) TRANSISTOR

FEATURES *500mWPOWERDISSIPATION *ICCONT1.25A *3APeakPulseCurrent *ExcellentHFECharacteristicsUpto3A(pulsed) *ExtremelyLowEquivalentOnResistance;RCE(sat) APPLICATIONS *Cordedtelecoms. *BoostfunctionsinDC-DCconverters *Motordriverfunctions

ZUMT618

Super323
SOT323 PNP SILICON POWER (SWITCHING) TRANSISTOR 3A Peak Pulse Current

Features ?BVCEO>-20V ?IC=-1AContinuousCollectorCurrent ?ICM=-3APeakPulseCurrent ?LowSaturationVoltage-250mVMax@IC=-1A. ?RCE(SAT)=200m?@1AforaLowEquivalentOn-Resistance ?500mWPowerDissipation ?ExcellenthFECharacteristicsupto3A ?ComplementaryNPNT

ZUMT618_15

Super323? SOT323 NPN SILICON POWER(SWITCHING) TRANSISTOR

ZUMT618TA

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：SC-70，SOT-323 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 20V 1.25A SOT323

ZUMT618TC

包裝：卷帶（TR） 封裝/外殼：SC-70，SOT-323 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 20V 1.25A SOT323

ZXTD618MC

DUAL20VNPNLOWSATURATIONSWITCHINGTRANSISTOR

FeaturesandBenefits ?BVCEO>20V ?IC=4.5AContinuousCollectorCurrent ?LowSaturationVoltage(150mV@1A) ?RSAT=47m?foraLowEquivalentOn-Resistance ?hFEspecifiedupto6Aforhighcurrentgainholdup ?DualNPNsavingfootprintandcomponentcount ?Lowprofile0.8mmhigh

ZXTD618MCTA

DUAL20VNPNLOWSATURATIONSWITCHINGTRANSISTOR

FeaturesandBenefits ?BVCEO>20V ?IC=4.5AContinuousCollectorCurrent ?LowSaturationVoltage(150mV@1A) ?RSAT=47m?foraLowEquivalentOn-Resistance ?hFEspecifiedupto6Aforhighcurrentgainholdup ?DualNPNsavingfootprintandcomponentcount ?Lowprofile0.8mmhigh

ZXTN618MA

20VNPNLOWSATURATIONTRANSISTOR

FeaturesandBenefits ?BVCEO>20V ?IC=4.5AContinuousCollectorCurrent ?LowSaturationVoltage(150mVmax@1A) ?RSAT=47m?foralowequivalentOn-Resistance ?hFEspecifiedupto6Aforhighcurrentgainholdup ?Lowprofile0.6mmhighpackageforthinapplications ?RθJAeffic

ZXTN618MATA

20VNPNLOWSATURATIONTRANSISTOR

FeaturesandBenefits ?BVCEO>20V ?IC=4.5AContinuousCollectorCurrent ?LowSaturationVoltage(150mVmax@1A) ?RSAT=47m?foralowequivalentOn-Resistance ?hFEspecifiedupto6Aforhighcurrentgainholdup ?Lowprofile0.6mmhighpackageforthinapplications ?RθJAeffic

ZXTNS618MC

20VNPNLOWSATURATIONTRANSISTORAND40V,1ASCHOTTKYDIODECOMBINATIONDUAL

FeaturesandBenefits NPNTransistor ?BVCEO>20V ?IC=4.5AContinuousCollectorCurrent ?LowSaturationVoltage(150mVmax@1A) ?RSAT=47m?foralowequivalentOn-Resistance ?hFEcharacterizedupto6Aforhighcurrentgainholdup SchottkyDiode ?BVR>40V

ZXTNS618MCTA

20VNPNLOWSATURATIONTRANSISTORAND40V,1ASCHOTTKYDIODECOMBINATIONDUAL

FeaturesandBenefits NPNTransistor ?BVCEO>20V ?IC=4.5AContinuousCollectorCurrent ?LowSaturationVoltage(150mVmax@1A) ?RSAT=47m?foralowequivalentOn-Resistance ?hFEcharacterizedupto6Aforhighcurrentgainholdup SchottkyDiode ?BVR>40V