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ZVP4105

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES *50VoltVDS *RDS(on)=10? *Lowthreshold

Zetex

Zetex Semiconductors

ZVP4105A

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES *50VoltVDS *RDS(on)=10? *Lowthreshold

Zetex

Zetex Semiconductors

ZVP4105A

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES *50VoltVDS *RDS(on)=10? *Lowthreshold

DIODES

Diodes Incorporated

4105

RelampableSocket

VCC

Visual Communications Company

ACTR4105

trueone-port,surface-acoustic-wave(SAW)resonator

ACT

Advanced Crystal Technology

AN4105

DesignConsiderationsforSwitchedModePowerSuppliesUsingAFairchildPowerSwitch(FPS)inaFlybackConverter

Introduction Flybackswitchedmodepowersupplies(SMPS)areamongthemostfrequentlyusedpowercircuitsinhouseholdandconsumerelectronics.ThebasicfunctionofanSMPSistosupplyregulatedpowertotheloadonthesecondary,oroutputside.AnSMPStypicallyincorporatesapowertransfo

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

AUIRFR4105

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105

AdvancedPlanarTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRFR4105

AdvancedPlanarTechnology

AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesign

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRFR4105TR

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105TRL

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105TRR

AdvancedPlanarTechnologyLowOn-Resistance

IRF

International Rectifier

AUIRFR4105Z

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFR4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRFR4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRFR4105ZTR

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFR4105ZTRL

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFR4105ZTRL

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRFR4105ZTRR

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

AUIRFU4105Z

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    ZVP4105

  • 功能描述:

    MOSFET P-Chnl 50V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ZETEX
23+
TO-92S
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
詢價(jià)
ZTX
05+
原廠原裝
24051
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
ZETEX
24+
200
現(xiàn)貨供應(yīng)
詢價(jià)
ZETEX
17+
E-Line
5810
只做原裝正品
詢價(jià)
DIODES
23+
TO92-3
7750
全新原裝優(yōu)勢(shì)
詢價(jià)
Zetes
2339+
TO-92
5989
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
詢價(jià)
DIODES/ZETEX
23+
原廠封裝
13528
振宏微原裝正品,假一罰百
詢價(jià)
原裝ZETEX
19+
TO-92
20000
詢價(jià)
DIODES/美臺(tái)
1942+
TO-92
9852
只做原裝正品現(xiàn)貨或訂貨!假一賠十!
詢價(jià)
ZETEX
2020+
TO-92S
8000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
詢價(jià)
更多ZVP4105供應(yīng)商 更新時(shí)間2024-11-19 11:10:00