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ZXTP19060CGTA

60V PNP medium transistor in SOT223

Features ?BVCEO>-60V ?BVECO>-7V ?IC=5AHighContinuousCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

ZXTP19060CGTA

60V PNP medium transistor

Description PackagedintheSOT223outlinethisnewlowsaturationPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features ?HighGain ?Lowsaturationvoltage ?Highpeakcurrent ?7Vreverse

Zetex

Zetex Semiconductors

ZXTP19060CGTA

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：TO-261-4，TO-261AA 類別：分立半導體產品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 60V 5A SOT223-3

PAM

Diodes Incorporated

AGR19060E

60W,1930MHz-1990MHz,PCSLDMOSRFPowerTransistor

Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess

TriQuint

TriQuint Semiconductor

AGR19060EF

60W,1930MHz-1990MHz,PCSLDMOSRFPowerTransistor

Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess

TriQuint

TriQuint Semiconductor

AGR19060EU

60W,1930MHz-1990MHz,PCSLDMOSRFPowerTransistor

Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess

TriQuint

TriQuint Semiconductor

LET19060C

RFPOWERTRANSISTORSLdmosEnhancedTechnology

DESCRIPTION TheLET19060CisacommonsourceN-Channelenhancement-modelateralField-EffectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.TheLET19060Cisdesignedforhighgainandbroadbandperformanceoperatingincommonsource

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MRF19060

RFPOWERFIELDEFFECTTRANSISTORS

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforCDMA,TDMA,GSMandmulticarrieramplifierapplications. ?TypicalCDMAPerformance:1960MHz,2

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF19060

RFPowerFieldEffectTransistors

RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1900to2000MHz.SuitableforCDMA,TDMA,GSMandmulticarrieramplifierapplications. ?TypicalCDMAPerformance:1960MHz,26VoltsIS-95CDMA

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

ZXTN19060CFF

60V,SOT23F,NPNhighgainpowertransistor

Description ThismidvoltageNPNtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisof

Zetex

Zetex Semiconductors

ZXTN19060CFF

60VNPNHIGHGAINPOWERTRANSISTOR

Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Featu

DIODES

Diodes Incorporated

ZXTN19060CFFTA

60VNPNHIGHGAINPOWERTRANSISTOR

Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Featu

DIODES

Diodes Incorporated

ZXTN19060CFFTA

60V,SOT23F,NPNhighgainpowertransistor

Description ThismidvoltageNPNtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisof

Zetex

Zetex Semiconductors

ZXTN19060CG

60VNPNlowsatmediumpowertransistor

Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features ?HigherpowerdissipationSOT223package ?Highpeakcurrent ?Lowsat

Zetex

Zetex Semiconductors

ZXTN19060CG

60VNPNlowsatmediumpowertransistorinSOT223

Features ?BVCEO>60V ?IC=7AContinuousCollectorCurrent ?ICM=12APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

ZXTN19060CGTA

60VNPNMEDIUMPOWERLOWSATURATIONTRANSISTOR

DIODES

Diodes Incorporated

ZXTN19060CGTA

60VNPNlowsatmediumpowertransistorinSOT223

Features ?BVCEO>60V ?IC=7AContinuousCollectorCurrent ?ICM=12APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

ZXTN19060CGTA

60VNPNlowsatmediumpowertransistor

Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features ?HigherpowerdissipationSOT223package ?Highpeakcurrent ?Lowsat

Zetex

Zetex Semiconductors

ZXTP19060C

60VPNPmediumtransistor

Description PackagedintheSOT223outlinethisnewlowsaturationPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features ?HighGain ?Lowsaturationvoltage ?Highpeakcurrent ?7Vreverse

Zetex

Zetex Semiconductors

ZXTP19060CFF

60V,SOT23F,PNPmediumpowertransistor

Description ThismediumvoltagePNPtransistorisdesignedforapplicationsrequiringhigh-gainandlow-saturationvoltage.TheSOT23FpackageisPINcompatiblewiththeindustrystandardSOT23footprintwhileofferingalowerprofileandhigherpowerdissipationforapplicationswherepowerdens

DIODES

Diodes Incorporated

產品屬性

  • 產品編號：

    ZXTP19060CGTA

  • 制造商：

    Diodes Incorporated

  • 類別：

    分立半導體產品 > 晶體管 - 雙極性晶體管（BJT）- 單個

  • 包裝：

    卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶

  • 晶體管類型：

    PNP

  • 不同?Ib、Ic 時?Vce 飽和壓降（最大值）：

    500mV @ 500mA，5A

  • 電流 - 集電極截止（最大值）：

    50nA（ICBO）

  • 不同?Ic、Vce?時 DC 電流增益 (hFE)（最小值）：

    200 @ 100mA，2V

  • 頻率 - 躍遷：

    180MHz

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    TO-261-4，TO-261AA

  • 供應商器件封裝：

    SOT-223-3

  • 描述：

    TRANS PNP 60V 5A SOT223-3

供應商型號品牌批號封裝庫存備注價格
Diodes Incorporated
24+
TO-261-4,TO-261AA
30000
晶體管-分立半導體產品-原裝正品
 詢價
ZETEX/DIODES
SOT-223
30216
原裝 原裝 原裝 只做原裝現貨
 詢價
DIODES/美臺
2019+
SOT223
78550
原廠渠道 可含稅出貨
 詢價
DIODES/美臺
20+
SOT-223
120000
原裝正品 可含稅交易
 詢價
DIODES(美臺)
23+
SOT-223-4
8498
支持大陸交貨,美金交易。原裝現貨庫存。
 詢價
ZETEX/DIODES
2024
SOT223
500840
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力高端行業(yè)供應商
 詢價
DIODES/美臺
23+
SOT-223
360000
專業(yè)供應MOS/LDO/晶體管/有大量價格低
 詢價
ZetexInc
24+
SOT-223TO-261
7500
詢價
DIODES
1728+
?
7500
只做原裝進口,假一罰十
 詢價
DiodesZetex
18+
NA
3000
進口原裝正品優(yōu)勢供應
 詢價
更多ZXTP19060CGTA供應商 更新時間2025-1-13 20:17:00

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