749252060

Marking：060；WE-CST Current Sense Transformer

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

BSC060N10NS3G

Marking：060N10NS；Package：PG-TDSON-8；OptiMOS3 Power-Transistor

Features ?Verylowgatechargeforhighfrequencyapplications ?Optimizedfordc-dcconversion ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?150°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Qualifiedac

IPA060N06N

Marking：060N06N；Package：PG-TO220-FP；OptiMOSTM Power-Transistor, 60 V

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

IPA060N06N

Marking：060N06N；Package：PG-TO220-FP；Superior thermal resistance

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

ISC0604NLS

Marking：0604NLS；Package：PG-TDSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features ?OptimizedforhighperformanceSMPS,e.g.synchronousrectification ?100avalanchetested ?Superiorthermalresistance ?N-channel,logiclevel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

ISC0605NLS

Marking：0605NLS；Package：PG-TDSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features ?OptimizedforhighperformanceSMPS,e.g.synchronousrectification ?100avalanchetested ?Superiorthermalresistance ?N-channel,logiclevel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

ISC060N10NM6

Marking：060N10N6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitchingandsynchronousrectification ?

LSC06065TDW

Marking：06065TDW；Package：TO-252；SILICON CARBIDE SCHOTTKY DIODE

FEATURES ?Positivetemperaturecoefficientforsafeoperationandeasyof paralleling ?175°Cmaximumoperatingjunctiontemperature ?Essentiallynoreverseorforwardrecovery ?Extremelyfastswitchingnotdependentontemperature ?QualifiedaccordingtoAEC-Q101Rev_D ?Lead-FreeFini

PHPT60603NY-Q

Marking：0603NAB；Package：SOT669；60 V, 3 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. PNPcomplement:PHPT60603PY-Q 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Hightemperatureapplicationsupto175°C ?ReducedPrin

PHPT60603PY-Q

Marking：0603PAB；Package：SOT669；60 V, 3 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. NPNcomplement:PHPT60603NY-Q 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Suitableforhightemperatureapplicationsupto175°C ?