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7448991068

Marking：068；WE-MCRI SMT Molded Coupled Inductor

GeneralInformation: AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

IPB068N20NM6

Marking：068N20N6；Package：PG-TO263-3；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD068N10N3G

Marking：068N10N；Package：TO-252；100V N-Channel MOSFET

Features ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Idealforhigh-frequencyswitchingandsynchronousrectification ?(VGS=10V) ?VDS(V)=100V ?ID=90A ?RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IPD068P03L3G

Marking：068P03L；Package：TO-252；-30V P-Channel MOSFET

Features ?QualifiedaccordingJEDEC1)fortarget ?175°Coperatingtemperature ?100Avalanchetested ?Pb-free;RoHScompliant,halogenfree ?applications:powermanagement

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

SVT068R5NDTR

Marking：068R5ND；Package：TO-252-2L；80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Th

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVT068R5NL5TR

Marking：068R5NL5；80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Th

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVT068R5NSTR

Marking：068R5NS；Package：TO-263-2L；80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Th

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVT068R5NT

Marking：068R5NT；Package：TO-220-3L；80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5isanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Th

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    068

  • 制造商：

    SPC Multicomp

  • 功能描述：

    HEEL GROUNDER VELCRO 1MEG EACH

  • 功能描述：

    HEEL GROUNDER, VELCRO, 1MEG, EACH

  • 功能描述：

    HEEL GROUNDER, VELCRO, 1MEG, EACH; Grounder

  • Type：

    Heel; Grounder

  • Colour：

    Black;

  • Resistance：

    1Mohm; Lead

  • Length：

    200mm; Strap

  • Material：

    Rubber; Fastening

  • Type：

    Hook and Loop;

  • SVHC：

    No SVHC(19-Dec-2012);

  • Colour：

    Black; End To End ;RoHS

  • Compliant：

    NA

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
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3
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93920
專做原裝正品,假一罰百!
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更多068供應(yīng)商 更新時(shí)間2025-2-11 9:00:00

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