零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
10NM60ND | N-Channel 6 50V (D-S) Power MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | |
N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh?technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-252(DPAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ??????? ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel600V,0.57,8A,DPAK,TO-220FP,TO-220FDmeshIIPowerMOSFET(withfastdiode) Description ThisFDmesh?IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh?technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel600V,0.57,8A,DPAK,TO-220FP,TO-220FDmeshIIPowerMOSFET(withfastdiode) Description ThisFDmesh?IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-channel600V,0.53Ωtyp.,10AMDmesh?IIPowerMOSFETinI2PAKpackage Features ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgenerationof MDmesh?technology.ThisrevolutionaryPower MOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
TOSHIBA/東芝 |
22+ |
TO-220F |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
- |
23+ |
NA |
5000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳 |
詢價(jià) | ||
TOSHIBA |
24+ |
TO-TO-220F |
12300 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
LINEAR/凌特 |
23+ |
SOIC8 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
UTC/友順 |
24+ |
TO-251 |
100000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
UTC/友順 |
23+ |
TO-252 |
6800 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
UTC/友順 |
24+ |
TO262 |
100000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
UTC |
20232024 |
TO262 |
6000 |
老牌代理,長期現(xiàn)貨 |
詢價(jià) | ||
ST |
23+ |
220-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ST |
22+ |
220-220F |
25000 |
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十 |
詢價(jià) |
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