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STI10NM60N

Marking：10NM60N；Package：I2PAK；N-channel 600 V, 0.53 Ω typ.,10 A MDmesh? II Power MOSFET in I2PAK package

Features ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgenerationof MDmesh?technology.ThisrevolutionaryPower MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

10NM60N

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

10NM60ND

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STD10NM60N

N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh?technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD10NM60N

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-252(DPAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ??????? ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STD10NM60ND

N-channel600V,0.57,8A,DPAK,TO-220FP,TO-220FDmeshIIPowerMOSFET(withfastdiode)

Description ThisFDmesh?IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF10NM60N

N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh?technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF10NM60ND

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STF10NM60ND

N-channel600V,0.57,8A,DPAK,TO-220FP,TO-220FDmeshIIPowerMOSFET(withfastdiode)

Description ThisFDmesh?IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP10NM60N

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    STI10NM60N

  • 制造商：

    STMicroelectronics

  • 功能描述：

    MOSFET N-CH 600V

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
24+
TO-262
8500
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STM
1809+
TO-262
1675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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22+
NA
974
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ST
23+
TO-262
50000
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ST/意法
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
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ST/意法
11+
TO-262
374
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ST
22+
TO2623 Long Leads I2Pak TO262A
9000
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ST/意法
22+
TO-262
8900
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ST/意法
22+
N
30000
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ST/意法
2023+
TO-262
6895
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更多STI10NM60N供應(yīng)商 更新時(shí)間2025-4-26 14:49:00

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