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744760112A

Marking：12N；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

744760112GA

Marking：12N；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

744762112GA

Marking：12N；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

D12V0S1U3LP20-7

Marking：12N；Package：U-DFN2020-3；1 CHANNEL HIGH SURGE TVS DIODE

Features ?ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV ?OneChannelofESDProtection ?LowChannelInputCapacitance ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Forautomotiveapplications

DIODES

Diodes Incorporated

IPTC012N06NM5

Marking：12N06NM5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 60 V

Features ?Optimizedformotordrivesandbatterypoweredapplications ?Optimizedfortopsidecooling ?Highcurrentcapability ?175°Crated ?100avalanchetested ?Superiorthermalperformance ?N-Channel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-2

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISC012N04LM6

Marking：12N04LM6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 40 V

Features ?N-channel ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 ?Optimizedforsyncronousapplication ?175°Crated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISC012N04NM6

Marking：12NO4NM6；Package：PG-TDSON-8FL；OptiMOS? 6 Power-Transistor, 40 V

Features ?Nechannel ?Verylowon-resistanceRosion ?Superiorthermalresistance. ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 -Optimizedforlowvoltagedriveapplications -Optimizedforbatterypoweredapplications ?Oplimiz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

RFD12N06

Marking：12N06LE；Package：TO-252；60V N-Channel MOSFET

Features ?UltraLowOn-Resistance -RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

RFD12N06RLESM9A

Marking：12N06LE；Package：TO-252；60V N-Channel MOSFET

Features ?UltraLowOn-Resistance -RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

RM12N100LD

Marking：12N100；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Description TheRM12N100LDusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures VDS=100V,ID=12A RDS(ON)

RECTRON

Rectron Semiconductor

詳細(xì)參數(shù)

  • 型號(hào)：

    12N

  • 功能描述：

    Analog IC

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SAMWIN
TO-220F
2809
正品原裝--自家現(xiàn)貨-實(shí)單可談
 詢價(jià)
FUJ/富士
1215+
TO-220F
150000
全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng).
 詢價(jià)
HARRIS
97+
TO220/
2800
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢價(jià)
24+
8866
詢價(jià)
INFINEON
23+
TO-3P
5000
原裝正品,假一罰十
 詢價(jià)
進(jìn)口原裝
23+
TO-220
1861
專業(yè)優(yōu)勢(shì)供應(yīng)
 詢價(jià)
UTC
24+
TO220F
6000
深圳原裝現(xiàn)貨價(jià)格優(yōu)勢(shì)
 詢價(jià)
HARRIS
24+
TO-252
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
INFINEON
TO-252
17432
提供BOM表配單只做原裝貨值得信賴
 詢價(jià)
HARRIS
17+
TO220/
9988
只做原裝進(jìn)口,自己庫(kù)存
 詢價(jià)
更多12N供應(yīng)商 更新時(shí)間2025-2-1 16:20:00

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