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P2000DM

Marking:20M;Package:SOD-123FL;Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Eliminatesovervoltagecausedbyfastrisingtransients Moisturesensitivitylevel:Level1 Weight69mg(approximate) Nondegenerative ResponseTimeis

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

TPS6285020MDRLR

Marking:20M;Package:SOT-5X3;TPS62850x 2.7-V to 6-V, 1-A / 2-A / 3-A Step-Down Converter in SOT583 Package

1Features ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?Inputvoltagerange:2.7Vto6V ?Outputvoltagefrom0.6Vto5.5V ?1feedbackvoltageaccuracy (fulltemperaturerange) ?TJ=–40°Cto+150°C ?Familyof1-A,2-A(continuous),

TI1Texas Instruments

德州儀器

TPS6285020MDRLR

Marking:20M;Package:SOT-5X3;TPS62850x 2.7V to 6V, 1A / 2A / 3A Step-Down Converter in SOT583 Package

1Features ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?Inputvoltagerange:2.7Vto6V ?Outputvoltagefrom0.6Vto5.5V ?1feedbackvoltageaccuracy (fulltemperaturerange) ?TJ=–40°Cto+150°C ?Familyof1A,2A(continuous),and3

TI1Texas Instruments

德州儀器

IMYH200R012M1H

Marking:20M1H012;Package:PG-TO247-4-PLUS-NT14;CoolSiC? 2000 V SiC Trench MOSFET

Features ?VDSS=2000VatTvj=25°C ?IDCC=123AatTc=25°C ?RDS(on)=12mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustbodydiodeforhardcommutation ?.XTinterconnectiontechnologyforbest-in-classthermal

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMYH200R024M1H

Marking:20M1H024;Package:PG-TO247-4-PLUS-NT14;CoolSiC? 2000 V SiC Trench MOSFET

Features ?VDSS=2000VatTvj=25°C ?IDCC=89AatTc=25°C ?RDS(on)=24mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustbodydiodeforhardcommutation ?.XTinterconnectiontechnologyforbest-in-classthermalp

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMYH200R050M1H

Marking:20M1H050;Package:PG-TO247-4-PLUS-NT14;CoolSiC? 2000 V SiC Trench MOSFET

Features ?VDSS=2000VatTvj=25°C ?IDCC=48AatTc=25°C ?RDS(on)=50mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustbodydiodeforhardcommutation ?.XTinterconnectiontechnologyforbest-in-classthermalp

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMYH200R075M1H

Marking:20M1H075;Package:PG-TO247-4-PLUS-NT14;CoolSiC? 2000 V SiC Trench MOSFET

Features ?VDSS=2000VatTvj=25°C ?IDCC=34AatTc=25°C ?RDS(on)=75mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustbodydiodeforhardcommutation ?.XTinterconnectiontechnologyforbest-in-classthermalp

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMYH200R100M1H

Marking:20M1H100;Package:PG-TO247-4-PLUS-NT14;CoolSiC? 2000 V SiC Trench MOSFET

Features ?VDSS=2000VatTvj=25°C ?IDCC=26AatTc=25°C ?RDS(on)=100mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustbodydiodeforhardcommutation ?.XTinterconnectiontechnologyforbest-in-classthermal

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

TPS6285020MQDRLRQ1

Marking:20MQ;Package:SOT-5X3;TPS62850x-Q1 2.7-V to 6-V, 1-A / 2-A / 3-A Automotive Step-Down Converter in SOT583 Package

1Features ?AEC-Q100qualifiedforautomotiveapplications –Devicetemperaturegrade1: –40°Cto+125°CTA ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?OptimizedforlowEMIrequirements –Optionalpseudo-randomspreadspectrum reducesp

TI1Texas Instruments

德州儀器

TPS6285020MQDRLRQ1

Marking:20MQ;Package:SOT-5X3;TPS62850x-Q1 2.7V to 6V, 1A / 2A / 3A Automotive Step-Down Converter in SOT583 Package

1Features ?AEC-Q100qualifiedforautomotiveapplications –Devicetemperaturegrade1: –40°Cto+125°CTA ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?OptimizedforlowEMIrequirements –Optionalpseudo-randomspreadspectrum reducesp

TI1Texas Instruments

德州儀器

詳細參數(shù)

  • 型號:

    20M

  • 制造商:

    Marinco Electrical Group

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更多20M供應(yīng)商 更新時間2025-2-21 16:09:00