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20N06

Marking：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS=60V,ID=20A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology ExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

20N06

Marking：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

GeneralDescription The20N06usesadvancedtrenchtechnologyanddesignto provideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications. Features VDS=60V,ID=20A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

20N40CL

SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETES?monolithiccircuitryforusageasanIgnitionCoilDriver. ?TemperatureCompensatedGate–C

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

20N50

N-Channel Power MOSFET

DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,motorcontrolcircuits,UPSandgeneralpurposeswitchingapplications.TheNell20N50isathree-terminalsilicondevicewithcurrentconductioncapabilityof20A,fastswitchingsp

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

20N60

20A, 600V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCUnisonic Technologies

友順友順科技股份有限公司

20N60A4D

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

TheHGTG20N60A4DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThisdevicehasthehighinputimpedanceofaMOSFET andthelowon?stateconductionlossofabipolartransistor.Themuch loweron?statevoltagedropvariesonlymode

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

20N60B

HiPerFAST IGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features ?InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD ?Highcurrenthandlingcapability ?LatestgenerationHDMOSTMprocess ?MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

20N60BD1

HiPerFAST IGBT with Diode

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features ?Internationalstandardpackages ?HighfrequencyIGBTandantiparallelFREDinonepackage ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on -drivesimplicity Applications ?Unin

IXYS

IXYS Corporation

20N60C2

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

20N60C3

45A, 600V, UFS Series N-Channel IGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately

Intersil

Intersil Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
AOS
16+
TO-252
980
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
 詢價(jià)
UMW 友臺(tái)
23+
TO-252
30000
原裝正品，實(shí)單請(qǐng)聯(lián)系
 詢價(jià)
ON
2024+
TO-251
32560
原裝優(yōu)勢(shì)絕對(duì)有貨
 詢價(jià)
ON
2013
TO252
6000
全新
 詢價(jià)
VB
2024
TO-252251
13500
16余年資質(zhì) 絕對(duì)原盒原盤代理渠道 更多數(shù)量
 詢價(jià)
12+
TO-252
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
ON/FAI
23+
TO-251
9000
詢價(jià)
ON
24+
TO-251
2
詢價(jià)
ON
23+
TO252
9680
價(jià)格優(yōu)勢(shì)、原裝現(xiàn)貨、客戶至上。歡迎廣大客戶來電查詢
 詢價(jià)
AOS
2020+
TO-252
25900
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
更多20N供應(yīng)商 更新時(shí)間2025-1-24 15:14:00

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