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20N40L-T47-T

400V, 23A N-CHANNEL POWER MOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

AOTF20N40

400V,20AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

AOTF20N40

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDH20N40

20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET

Features ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ?ReducedrDS(ON) ?ReducedMillerCapacitanceandLowInputCapacitance ?ImprovedSwitchingSpeedwithLowEMI ?175°CRatedJunctionTemperature pp SwitchMo

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDH20N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.216Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitch

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDP20N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=45A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.02Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDP20N40

20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET

Features ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ?ReducedrDS(ON) ?ReducedMillerCapacitanceandLowInputCapacitance ?ImprovedSwitchingSpeedwithLowEMI ?175°CRatedJunctionTemperature pp SwitchMo

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA20N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=19.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQA20N40

400VN-ChannelMOSFET

Features ?19.5A,400V,RDS(on)=0.22?@VGS=10V ?Lowgatecharge(typical60nC) ?LowCrss(typical45pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MGP20N40CL

SMARTDISCRETESInternallyClamped,N-ChannelIGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETES?monolithiccircuitryforusageasanIgnitionCoilDriver. ?TemperatureCompensatedGate–C

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGP20N40CL

SMARTDISCRETESInternallyClamped,N-ChannelIGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETES?monolithiccircuitryforusageasanIgnitionCoilDriver. ?TemperatureCompensatedGate–C

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

SDM20N40A

DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE

DIODES

Diodes Incorporated

SDM20N40A

DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE

Features ?LowForwardVoltageDrop ?CommonAnodeConfiguration ?LeadFreeByDesign/RoHSCompliant(Note3) ?GreenDevice(Note4)

DIODES

Diodes Incorporated

SGR20N40L

GeneralDescription

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGR20N40L

Highinputimpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGU20N40

Highinputimpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGU20N40L

Highinputimpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

STGB20N40LZ

Lowsaturationvoltage

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGD20N40LZ

Lowsaturationvoltage

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    20N40L

  • 制造商：

    UTC-IC

  • 制造商全稱：

    UTC-IC

  • 功能描述：

    400V, 23A N-CHANNEL POWER MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
UTC/友順
24+
TO247
100000
原裝現(xiàn)貨
 詢價(jià)
UTC/友順
2022+
TO-247
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
UTC/友順
2022+
TO-247
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
UTC
20232024
TO247
6000
老牌代理,長(zhǎng)期現(xiàn)貨
 詢價(jià)
ISC/固電
23+
TO-3PN
5000
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳
 詢價(jià)
24+
N/A
65000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
FUJI
08+
TO220F
1000
原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量大可以發(fā)貨
 詢價(jià)
臺(tái)灣瑞森
1948+
TO-220F
18562
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
BR
20+
TO-3P
38900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
UTC/友順
23+
TO-3P
10000
公司只做原裝正品
 詢價(jià)
更多20N40L供應(yīng)商 更新時(shí)間2025-1-7 13:20:00

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